On-chip environmentally assisted cracking in thin freestanding SiO2 films

An on-chip fracture mechanics method is extended to characterize subcritical crack growth in submicron freestanding films. The method relies on a self-actuated concept based on MEMS fabrication principles. The configuration consists of a notched specimen attached to actuator beams involving high internal stress. Upon release, a crack initiates at the notch, propagates, and arrests. Several improvements are worked out to limit the mode III component and to avoid crack kinking. The method is applied to subcritical crack growth in 140-nm-thick SiO2 films under different humidity conditions. The data reduction scheme relates crack growth rate to stress intensity factor. The static fracture toughness value is ~ 0.73 MPa $$\sqrt{\mathrm{m}}$$ m , with standard error of 0.01 MPa $$\sqrt{\mathrm{m}}$$ m and standard deviation of 0.17 MPa $$\sqrt{\mathrm{m}}.$$ m . Subcritical crack growth rates are much smaller than in bulk specimens. A major advantage is that many test samples can be simultaneously monitored while avoiding any external equipment. Graphic Abstract