Analysis of DC-Metal Contact RF MEMS Switch with Split Beam Structure for Wireless Application

Author(s):  
R. Raman ◽  
T. Shanmuganantham
2009 ◽  
Vol 60-61 ◽  
pp. 224-227
Author(s):  
Le Lu ◽  
Jian Zhu ◽  
Shi Xin Jian ◽  
Chen Chen

. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.


2017 ◽  
Vol 23 (10) ◽  
pp. 4699-4708 ◽  
Author(s):  
Peigang Deng ◽  
Ning Wang ◽  
Feng Cai ◽  
Longquan Chen

2017 ◽  
Vol 4 (1) ◽  
pp. 1323367 ◽  
Author(s):  
T. Lakshmi Narayana ◽  
K. Girija Sravani ◽  
K. Srinivasa Rao ◽  
Kun Chen

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Adel Saad Emhemmed ◽  
Abdulmagid A. Aburwein

We present a new design of a miniature RF microelectromechanical system (MEMS) metal-contact switch and investigate various aspects associated with lowering the pull-down voltage and overcoming the stiction problem. Lowering the pull-down voltage in this design is based on reducing the spring constant by changing the cantilever beam geometry of the RF MEMS switch, and the stiction problem is overcome by a simple integrated method using two tiny posts located on the substrate at the free end of the cantilever beam.


2011 ◽  
Vol 21 (6) ◽  
pp. 065038 ◽  
Author(s):  
Bo Liu ◽  
Zhiqiu Lv ◽  
Xunjun He ◽  
Meng Liu ◽  
Yilong Hao ◽  
...  

2007 ◽  
Author(s):  
Tauno Vähä-Heikkilä ◽  
Pekka Rantakari

Sign in / Sign up

Export Citation Format

Share Document