scholarly journals Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

2017 ◽  
Vol 14 (8) ◽  
pp. 20170141-20170141 ◽  
Author(s):  
Younghwan Son ◽  
Yoon Kim ◽  
Myounggon Kang
Keyword(s):  
Gate Oxide ◽  
Trap Density ◽  
Charge Pumping ◽  
Oxide Trap

Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide

2011 ◽  
Vol 58 (8) ◽  
pp. 2752-2758 ◽  
Author(s):  
Younghwan Son ◽  
Sunyoung Park ◽  
Taewook Kang ◽  
Byoungchan Oh ◽  
Hyungcheol Shin
Keyword(s):  
Gate Oxide ◽  
Trap Density ◽  
Charge Pumping

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 793-796 ◽  
Author(s):  
Liang Chun Yu ◽  
Jody Fronheiser ◽  
Vinayak Tilak ◽  
Kin P. Cheung
Keyword(s):  
Trap Density ◽  
Power Devices ◽  
Frequency Dependent ◽  
Charge Pumping ◽  
Interface Characterization ◽  
Characterization Technique ◽  
Oxide Trap ◽  
And Performance ◽  
The Stability

The quality of the SiC/SiO2 interface is critical to the stability and performance of MOS-based SiC power devices. Charge pumping is a flexible interface characterization technique. In this work, a significant portion of the total traps are found to be located in the near-interface oxide using frequency-dependent charge pumping. Oxide trap tunneling mechanisms are discussed, and trap profile as a function of depth is calculated. The trap density is shown to increase exponentially as it gets closer to the interface.

Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications

2009 ◽  
Vol 8 (5) ◽  
pp. 654-658 ◽  
Author(s):  
Younghwan Son ◽  
Chang-Ki Baek ◽  
In-Shik Han ◽  
Han-Soo Joo ◽  
Tae-Gyu Goo ◽  
...  
Keyword(s):  
Trap Density ◽  
Oxide Trap
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