A Comprehensive Model for Write Disturbance in Resistive Memory Composed of Cross-Point Array

2017 ◽  
Vol E100.C (3) ◽  
pp. 329-339
Author(s):  
Yoshiaki ASAO ◽  
Fumio HORIGUCHI
Keyword(s):  
Comprehensive Model ◽  
Resistive Memory ◽  
Cross Point

Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design

2013 ◽  
Author(s):  
Leqi Zhang ◽  
Stefan Cosemans ◽  
Dirk J. Wouters ◽  
Bogdan Govoreanu ◽  
Guido Groeseneken ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Cross Point

Improving Multilevel Writes on Vertical 3D Cross-Point Resistive Memory

2020 ◽  
pp. 1-1
Author(s):  
Chengning Wang ◽  
Dan Feng ◽  
Wei Tong ◽  
Yu Hua ◽  
Jingning Liu ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Cross Point

scholarly journals Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1634
Author(s):  
Batyrbek Alimkhanuly ◽  
Sanghoek Kim ◽  
Lok-won Kim ◽  
Seunghyun Lee
Keyword(s):  
Random Access ◽  
Cost Effective ◽  
Metal Electrode ◽  
Electromagnetic Analysis ◽  
Resistive Memory ◽  
Cross Point ◽  
Device Scaling ◽  
Noise Margin ◽  
Computing Platforms ◽  
Switching Characteristics

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.

scholarly journals Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

2020 ◽  
Vol 6 (6) ◽  
pp. 2000154 ◽  
Author(s):  
Karl‐Magnus Persson ◽  
Mamidala Saketh Ram ◽  
Olli‐Pekka Kilpi ◽  
Mattias Borg ◽  
Lars‐Erik Wernersson
Keyword(s):  
Low Power ◽  
Memory Cells ◽  
Resistive Memory ◽  
Cross Point

Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications

2011 ◽  
Vol 22 (47) ◽  
pp. 475702 ◽  
Author(s):  
Xinjun Liu ◽  
Sharif Md Sadaf ◽  
Myungwoo Son ◽  
Jungho Shin ◽  
Jubong Park ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Cross Point ◽  
Memory Applications

scholarly journals Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

2013 ◽  
Vol 103 (20) ◽  
pp. 202113 ◽  
Author(s):  
Jiyong Woo ◽  
Daeseok Lee ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
Sangsu Park ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Cross Point ◽  
Memory Applications

Impact of Cell Failure on Reliable Cross-Point Resistive Memory Design

2015 ◽  
Vol 20 (4) ◽  
pp. 1-21 ◽  
Author(s):  
Cong Xu ◽  
Dimin Niu ◽  
Yang Zheng ◽  
Shimeng Yu ◽  
Yuan Xie
Keyword(s):  
Resistive Memory ◽  
Cross Point ◽  
Memory Design
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