Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation

2009 ◽  
Vol E92-C (5) ◽  
pp. 647-652 ◽  
Author(s):  
Sang Hyuk PARK ◽  
Sangwoo KANG ◽  
Seongjae CHO ◽  
Dong-Seup LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Dual Gate ◽  
Recessed Channel ◽  
Electron Transistors ◽  
Room Temperature Operation

Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure

2010 ◽  
Vol 49 (11) ◽  
pp. 115201
Author(s):  
Joung-Eob Lee ◽  
Garam Kim ◽  
Jang-Gn Yun ◽  
Kwon-Chil Kang ◽  
Jung-Han Lee ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Dual Gate ◽  
Recessed Channel ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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