TORCH DISCHARGE RESISTANCE AND FREQUENCY DEPENDENCE OF THE HF-SOURCE VOLTAGE REQUIRED TO SUSTAIN DISCHARGE

2015 ◽  
Vol 74 (7) ◽  
pp. 601-618
Author(s):  
A. O. Puzanov ◽  
A. N. Kuleshov ◽  
B. P. Yefimov
1995 ◽  
Vol 5 (7) ◽  
pp. 913-918 ◽  
Author(s):  
Frédéric Guérin ◽  
Akhlesh Lakhtakia

1989 ◽  
Vol 50 (1) ◽  
pp. 91-98 ◽  
Author(s):  
B. Dieny ◽  
X. Labouze ◽  
B. Barbara ◽  
G. Pillion ◽  
J. Filippi

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-99-C6-101
Author(s):  
R. Nava ◽  
M. Rodríguez
Keyword(s):  

2012 ◽  
Vol 132 (4) ◽  
pp. 333-334
Author(s):  
Takuya Arimura ◽  
Keta Hirano ◽  
Toshiyuki Hamada ◽  
Tatsuya Sakoda

Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


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