scholarly journals Reduction of drift of operating point in lithium niobate-based integrated-optical circuit

2021 ◽  
pp. 5-13
Author(s):  
Alexey V. Sosunov ◽  
◽  
Roman S. Ponomarev ◽  
Anton A. Zhuravlev ◽  
Sergey S. Mushinsky ◽  
...  
Keyword(s):  
Surface Layer ◽  
Lithium Niobate ◽  
Lithium Niobate Crystal ◽  
Proton Exchange ◽  
Operating Point ◽  
Near Surface ◽  
Optical Output ◽  
Integrated Optical ◽  
Optical Circuits ◽  
Integrated Optical Circuits

This work is devoted to the study of the drift of the operating point of integrated-optical circuits based on proton-exchange waveguides in lithium niobate crystal with a recovered structure of the near-surface layer. Recovered of the damaged near-surface layer of lithium niobate wafer was carried out using pre-annealing at temperature of 500 °C. Drift of operating point is characterized by a constant change in the optical output power of the integrated-optical circuits when a bias voltage is applied to the electrodes or temperature changes. Recovered of the damaged near-surface layer of lithium niobate wafer leads to a decrease in the short-term and long-term drifts of the operating point of integrated-optical circuits. Crystal structure factor was investigated on the drift of operating point of integrated-optical circuits based on lithium niobate crystal.

scholarly journals Investigation of near-surface layer dislocation density of lithium niobate single crystal wafers using chemical etching

2021 ◽  
Vol 2086 (1) ◽  
pp. 012031
Author(s):  
R S Ponomarev ◽  
A V Sosunov ◽  
O R Semenova ◽  
N P Prokhorov ◽  
M Kuneva
Keyword(s):  
Surface Layer ◽  
Diffusion Coefficient ◽  
Dislocation Density ◽  
Lithium Niobate ◽  
Single Crystal ◽  
Chemical Etching ◽  
Proton Exchange ◽  
Optical Modulators ◽  
Near Surface ◽  
Lithium Niobate Single Crystal

Abstract Using chemical etching it was shown that the density of dislocation in lithium niobate (LN) single crystal wafers is higher near the surface in depth about 20 um than in the depth of crystal. It caused to change of diffusion coefficient during the waveguide formation with proton exchange (PE) method and can increase DC-drift of intensity optical modulators based on PE-waveguides.

Reliability of lithium niobate Annealed Proton Exchanged integrated optical circuits

1995 ◽  
Author(s):  
Karl M. Kissa ◽  
Hogan Eng ◽  
David K. Lewis ◽  
Vincent D. Rodino ◽  
Paul G. Suchoski, Jr. ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Integrated Optical ◽  
Optical Circuits ◽  
Integrated Optical Circuits

Deepening of domains at e-beam writing on the -Z surface of lithium niobate

2021 ◽  
Author(s):  
Lyudmila Kokhanchik ◽  
Evgenii Emelin ◽  
Vadim Vladimirovch Sirotkin ◽  
Alexander Svintsov
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Lithium Niobate ◽  
Electric Field ◽  
Domain Walls ◽  
Normal Component ◽  
Beam Current ◽  
Near Surface ◽  
Domain Structures ◽  
Sign Inversion

Abstract The focus of the study was to investigate the peculiarities of the domains created by electron beam (e-beam) in a surface layer of congruent lithium niobate, which comparable to a depth of electron beam charge penetration. Direct e-beam writing (DEBW) of different domain structures with a scanning electron microscope was performed on the polar -Z cut. Accelerating voltage 15 kV and e-beam current 100 pA were applied. Different patterns of local irradiated squares were used to create domain structures and single domains. No domain contrast was observed by the PFM technique. Based on chemical etching, it was found that the vertices of the domains created do not reach the surface level. The average deepening of the domain vertices was several hundred nanometers and varied depending on the irradiation dose and the location of the irradiated areas (squares) relative to each other. Computer simulation was applied to analyze the spatial distribution of the electric field in the various irradiated patterns. The deepening was explained by the fact that in the near-surface layer there is a sign inversion of the normal component of the electric field strength vector, which controls the domain formation during DEBW. Thus, with the help of e-beam, domains were created completely located in the bulk, in contrast to the domains that are nucleated on the surface of the -Z cut during the polarization inversion with AFM tip. The detected deepening of e-beam domains suggests the possibility of creating the “head-to-head” domain walls in the near-surface layer lithium niobate by DEBW.

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