scholarly journals Counterbalanced Valve Metal Oxide as a Reliable Dielectric Layer for Electrowetting-on-dielectric Devices

2019 ◽  
Vol 31 (9) ◽  
pp. 2861
Author(s):  
Supin Chen ◽  
Chang-Jin �gCJ�h Kim
2014 ◽  
Vol 22 (3) ◽  
pp. 633-641
Author(s):  
许晓威 XU Xiao-wei ◽  
陈立国 CHEN Li- guo ◽  
贺文元 HE Wen-yuan ◽  
陈涛 CHEN Tao ◽  
孙立宁 SUN Li- ning

Integration ◽  
2019 ◽  
Vol 67 ◽  
pp. 50-59
Author(s):  
Semih Türk ◽  
Alexander Schug ◽  
Reinhard Viga ◽  
Andreas Jupe ◽  
Holger Vogt

1989 ◽  
Vol 136 (9) ◽  
pp. 2596-2598 ◽  
Author(s):  
A. de Battisti ◽  
G. Lodi ◽  
M. Cappadonia ◽  
G. Battaglin ◽  
R. Kötz

2011 ◽  
Vol 20 (4) ◽  
pp. 1010-1015 ◽  
Author(s):  
M. J. Schertzer ◽  
R. Ben-Mrad ◽  
Pierre E. Sullivan

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 425 ◽  
Author(s):  
Siting Chen ◽  
Yuzhi Li ◽  
Yilong Lin ◽  
Penghui He ◽  
Teng Long ◽  
...  

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.


1986 ◽  
Vol 200 (1-2) ◽  
pp. 93-104 ◽  
Author(s):  
A De Battisti ◽  
R. Brina ◽  
G. Gavelli ◽  
A. Benedetti ◽  
G. Fagherazzi

Author(s):  
Michael J. Schertzer ◽  
Sergey I. Gubarenko ◽  
Ridha Ben-Mrad ◽  
Pierre E. Sullivan

Discrete flow microfluidic devices have been identified as a technology that can be used to efficiently deliver health care services by reducing the cycle times and reagent consumption of common biological protocols and medical diagnostic procedures while reducing overhead costs by performing these applications at the point of care. Electrowetting on dielectric is one promising discrete flow microfluidic platform that can individually create, manipulate, and mix droplets through the application of asymmetric electric fields. The work presented outlines fundamental and practical contributions to the understanding and advancement of electrowetting on dielectric devices that the authors are using to develop a device capable of performing immunoassays on chip. Explicit analytical models for capillary force and the reduction in that force by contact angle hysteresis as a function of the three-dimensional shape of the droplet were derived to develop an empirically validated analytical model for transient motion of droplets in electrowetting on dielectric devices. This model accurately predicts the maximum droplet displacement and travel time to within 2.3% and 2.7%, respectively; whereas the average droplet velocity was always predicted to within 8.1%. It also demonstrates a method for real time monitoring of droplet composition, particle concentration, and chemical reactions in electrowetting on dielectric devices without optical access. This method has been used to determine the concentration of water-methanol solutions, measure the concentration of glass microspheres at various concentrations, and detect the chemical reactions that are typically used in immunoassays. A method for the mechanical filtration of droplets in these devices will also be presented. The proposed filtration method was successful at pore sizes at least two orders of magnitude below the droplet height, which is small enough to separate red and white blood cells in continuous flow microfluidic devices.


Langmuir ◽  
2010 ◽  
Vol 26 (24) ◽  
pp. 19230-19238 ◽  
Author(s):  
M. J. Schertzer ◽  
S. I. Gubarenko ◽  
R. Ben-Mrad ◽  
P. E. Sullivan

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