GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance
2011 ◽
Vol 44
(15)
◽
pp. 155104
◽
2002 ◽
Vol 41
(Part 2, No. 5B)
◽
pp. L549-L551
1993 ◽
Vol 140
(9)
◽
pp. 2648-2653
◽
Keyword(s):
2018 ◽
Vol 65
(4)
◽
pp. 1466-1472
◽
2012 ◽
Vol 2012
◽
pp. 1-7
◽
Keyword(s):
1997 ◽
Vol 144
(3)
◽
pp. 1020-1024
◽
Keyword(s):