scholarly journals Study of Electronic Properties of GaAs Semiconductor Using Density Functional Theory

Author(s):  
Fikri Abdi Putra ◽  
Endhah Purwandari ◽  
Bintoro S. Nugroho

The properties of GaAs material in zinc blende type was calculated using Hiroshima Linear Plane Wave program based on the Density Functional Theory. This calculation aims to determine electronic properties of GaAs material are based on Density of States and energy band structure. This simulation’s results are DOS shows that hybridization of s orbital of Ga with s orbital of As provides covalent properties. The simulation of energy band structure from GaAs material indicates that semiconductor properties of GaAs is direct band gap. The energy band gap results obtained for GaAs is 0.80 eV. The computational result of the energy band gap calculation form HiLAPW has better accuracy and prediction with good agreement within reasonable acceptable errors when compared to some other DFT programs and the results of the experimental obtained.

2021 ◽  
Vol 5 (2) ◽  
pp. 116-125
Author(s):  
V.B. Parmar ◽  
A.M. Vora

In the present paper, we report the structural optimization of intercalated CrTiS2 compound by using Density Functional Theory (DFT) with Generalized Gradient Approximation (GGA) through Quantum ESPRESSO code. All the computations are carried out by using an ultra-soft pseudopotential. The effect of charge transfer from guest 3d transition metal Cr-atom to self-intercalated compound TiS2 has been studied. In electronic properties, the energy band structure, total density of states (TDOS), partial density of states (PDOS) and Fermi surface have carried out. From the energy band structure, we conclude that the TiS2 -intercalated compound has a small bandgap while the doped compound with guest Cr-atom has metallic behavior as shown form its overlapped band structure.


MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1613-1618 ◽  
Author(s):  
Sadegh Mehdi Aghaei ◽  
Irene Calizo

ABSTRACTIn this study, density functional theory (DFT) is employed to investigate the electronic properties of armchair silicene nanoribbons perforated with periodic nanoholes (ASiNRPNHs). The dangling bonds of armchair silicene nanoribbons (ASiNR) are passivated by mono- (:H) or di-hydrogen (:2H) atoms. Our results show that the ASiNRs can be categorized into three groups based on their width: W = 3P − 1, 3P, and 3P + 1, P is an integer. The band gap value order changes from “EG (3P − 1) < EG (3P) < EG (3P + 1)” to “EG (3P + 1) < EG (3P − 1) < EG (3P)” when edge hydrogenation varies from mono- to di-hydrogenated. The energy band gap values for ASiNRPNHs depend on the nanoribbons width and the repeat periodicity of the nanoholes. The band gap value of ASiNRPNHs is larger than that of pristine ASiNRs when repeat periodicity is even, while it is smaller than that of pristine ASiNRs when repeat periodicity is odd. In general, the value of energy band gap for ASiNRPNHs:2H is larger than that of ASiNRPNHs:H. So a band gap as large as 0.92 eV is achievable with ASiNRPNHs of width 12 and repeat periodicity of 2. Furthermore, creating periodic nanoholes near the edge of the nanoribbons cause a larger band gap due to a strong quantum confinement effect.


2020 ◽  
Vol 1010 ◽  
pp. 308-313
Author(s):  
Akeem Adekunle Adewale ◽  
Abdullah Chik ◽  
Ruhiyuddin Mohd Zaki

Barium titanate (BaTiO3) is a perovskite based oxides with many potential application in electronic devices. From experimental report BaTiO3 has wide energy band gap of about 3.4 eV which by doped with Ca and Zr at A- and B- sites respectively can enhance their piezoelectric properties. Using first principles method within the density functional theory (DFT) as implement in Quantum Espresso (QE) with the plane wave pseudo potential function, the influence of the Ca and Zr doping in BaTiO3 are studied via electronic properties: band structure, total density of states (TDOS) and partial density of states (PDOS). The energy band gap calculated was underestimation which is similar to other DFT work. Two direct band gap where observed in Ba0.875Ca0.125Ti0.875Zr0.125O3 sample at Γ- Γ (2.31 eV) and X- X (2.35 eV) symmetry point.


2019 ◽  
Vol 1 (27) ◽  
pp. 79-85
Author(s):  
Hung Thanh Phan

The different structure and size of TiO2 nanoparticles ranging from 0.8 nm to 2.7 nm with two different phases of anatase and rutile were studied by Density  Functional theory based Tight Binding (DFTB) method. The results showed that the stability of the rutile phase was better than that of the anatase phase. Based on calculation of the electronic properties of particles, the energy band gap of rutile particles was comparable to that of bulk structure. In contrast, the energy band gap of the anatase changed irregularly. Moreover, the formation energy that was used for forming the particles was inversely proportional to their size based on computation of energy. The results provided useful instructions for practical applications in fabrication of TiO2 nanoparticles.


2019 ◽  
Vol 8 (2) ◽  
pp. 126-139
Author(s):  
Banjo Semire ◽  
◽  
Olusegun Ayobami Odunola

Bis(2-benzothiophen-1-yl)-4H-cyclopenta[2,1-b,3;4-b′]dithiophene derivatives comprised of three series; bis(2-thienyl)-4H-cyclopenta[2,1-b,3;4-b]dithiopene (BTDT), diphenyl4Hcyclopenta[2,1-b,3;4-b]dithiophene (DPDT) and bis(2-benzothiophen-1-yl)-4Hcyclopenta[2,1-b,3;4-b]dithiophene (BBDT) have been studied using Density Functional Theory (B3LYP/6-31G**). In each series, molecules with C=S bridge exhibited the lowest band gap; for instance in BBDT series, the energy band gap could be arranged as 2.29, 2.23 and 1.66 eV for CH2, C=O and C=S bridge respectively. The low band gaps calculated for BBDT-C=S (1.66 eV) and BTDT-C=S (1.82 eV) could facilitate photo-excited electron transfer as one the criteria for a molecule to be used in photovoltaic devices. Also, the results showed that longest UV-vis absorption wavelength was observed for molecules with C=S bridge, i.e. 1013.66, 874.75 and 1097.66 nm for BTDT, DPDT and BBDT respectively. The polarizability (α0) valves calculated for the molecules follow as -CH2 < C=O < C=S bridge in each series, indicating that the higher the polarizability (α0) valve the longer the λmax nm and the lower the energy band gap. The magnitude of the molecular hyperpolarizability β0 showed that molecular structures with -C=O bridge could be best NLO material in each series.


2010 ◽  
Vol 22 (13) ◽  
pp. 135006 ◽  
Author(s):  
I Pletikosić ◽  
M Kralj ◽  
D Šokčević ◽  
R Brako ◽  
P Lazić ◽  
...  

2021 ◽  
pp. 37-48
Author(s):  
Vandana B. Parmar ◽  
A. M. Vora,

The Density Functional Theory (DFT) based computational study is carried out for the transition metal dichalcogenides (TMDCs) compound TiS2 and their intercalated 3d transition metal compound CrTiS2. It is carried through Generalized Gradient Approximation (GGA) through Quantum ESPRESSO environment employing Perdew-Burke-Ernzerhof (PBE) exchange and correlation effect with an ultra-soft pseudopotential. In the present work, the structural optimization and electronic properties like energy band structure, density of states (DOS), partial or projected density of states (PDOS), total density of states (TDOS), Fermi surfaces and charge density are reported. The effect of charge transfer from guest 3d transition metal Cr-atom to self-intercalated compound TiS2 has been observed. While, the energy band structure of CrTiS2 compound is computed in the non-magnetic state. From the energy band structure of said materials, we conclude that the TiS2 compound has an indirect narrow band gap though the CrTiS2 compound has an overlapped band structure. The TiS2 shows a semiconductor or semi-metallic nature while doped compound with guest Cr-atom has a metallic material..


In the present work, we have studied intercalated Transition Metal Dichalcogenides (TMDC) MTiS2 compounds (M = Cr, Mn, Fe) by Density Functional Theory (DFT) with Generalized Gradient Approximation (GGA). We have computed the structural and electronic properties by using first principle method in QUANTUM ESPRESSO computational code with an ultra-soft pseudopotential. A guest 3d transition metal M (viz; Cr, Mn, Fe) can be easily intercalated in pure transition metal dichalcogenides compound like TiS2. In the present work, the structural optimization, electronic properties like the energy band structure, density of states (DoS), partial or projected density of states (PDoS) and total density of states (TDoS) are reported. The energy band structure of MTiS2 compound has been found overlapping energy bands in the Fermi region. We conclude that the TiS2 intercalated compound has a small band gap while the doped compound with guest 3d-atom has metallic behavior as shown form its overlapped band structure.


2020 ◽  
Author(s):  
Hugo Souza ◽  
Antonio Chaves Neto ◽  
Francisco Sousa ◽  
Rodrigo Amorim ◽  
Alexandre Reily Rocha ◽  
...  

In this work, we investigate the effects of building block separation of Phenylalanine-Tryptophan nanotube induced by the confined water molecules on the electronic properties using density-functional theory based tight-binding method. <div><br></div>


Sign in / Sign up

Export Citation Format

Share Document