HEAT EXCHANGE PROCESSES IN POWER SEMICONDUCTOR CONVERTER INSTALLATIONS WITH EVAPORATIVE AIR COOLING

Objective: To improve reliability and endurance of semiconductor devices by means of heat exchange processes optimization of installations with evaporative air cooling. Methods: Design features analysis of cooling installations was applied. Results: The structural features of “a twophase thermal siphon” for power semiconductor devices were described. Experimental research of power blocks of semiconductor converter installations with “two-phase thermal siphon” coolers was conducted. The values of maximum permissible currents upon the application of possible button-type instrument configurations with such coolers were obtained. Practical importance: Application of “two-phase thermal siphon” evaporative air coolers will make it possible to improve weight-size parameters of converter installations.

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Calculation and Experimental Study of Heat Exchange in a System of Plane-Parallel Channels with Surface Intensifiers

Nelineinaya Dinamika ◽

10.20537/nd210206 ◽

2021 ◽

Vol 17 (2) ◽

pp. 211-220

Author(s):

S. I. Kaskov ◽

Keyword(s):

Experimental Study ◽

Heat Exchange ◽

Heat Removal ◽

Air Cooling ◽

Airflow Rate ◽

Power Semiconductor ◽

Average Temperature ◽

Plane Parallel ◽

Parallel Channels ◽

The Difference

This paper presents the results of numerical investigation, calculation analysis and experimental study of heat exchange in a system of plane-parallel channels formed by rectangular fins, which are applied in a heat removal device using heat tubes for power semiconductor energy converters. Passive cooling (heat removal by radiation and natural convection) and active cooling (heat removal by radiation and forced convection) are investigated for various velocities of air cooling of fins by spherical vortex generators applied to its surface. A comparative analysis of the results is carried out for the average effective heat removal resistance and for the average temperature at the ends of the fins. The application of numerical modeling to solve such problems confirms the effectiveness of computational technologies. The difference between the results of the study ranges from 10 to 16% depending on the airflow rate.

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Heat-exchange processes in the heat-supply zones of two-phase thermosiphons operating on freons 11, 113, and 142 and on water and ethanol

Journal of Engineering Physics ◽

10.1007/bf00860204 ◽

1978 ◽

Vol 35 (2) ◽

pp. 895-899

Author(s):

M. G. Semena ◽

Yu. F. Kiselev

Keyword(s):

Heat Exchange ◽

Heat Supply ◽

Two Phase ◽

Exchange Processes

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Rating heat exchange processes in the AKhBT-06 air-cooling tube

Measurement Techniques ◽

10.1007/bf00977064 ◽

1992 ◽

Vol 35 (6) ◽

pp. 705-711

Author(s):

D. A. Shishkin ◽

E. A. Kosolapov ◽

A. V. Malakhov ◽

A. I. Tutin

Keyword(s):

Heat Exchange ◽

Air Cooling ◽

Exchange Processes ◽

Cooling Tube

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Development of Thermal Flow Simulation Method for Electronic Equipment Integrated With Electric Circuit Design: Application to the Thermal Design of a Natural Convection Air Cooling SMPS

Volume 4 ◽

10.1115/ht-fed2004-56062 ◽

2004 ◽

Author(s):

Katsuhiro Koizumi ◽

Masaru Ishizuka

Keyword(s):

Semiconductor Devices ◽

Flow Simulation ◽

Electric Circuit ◽

Simulation Method ◽

Thermal Design ◽

Electronic Equipment ◽

Air Cooling ◽

Thermal Flow ◽

Power Semiconductor ◽

Power Semiconductor Devices

This paper describes the development of a thermal flow simulation method for the design of electronic equipment. In the proposed sequence of analyses the first step is the estimation of heat generation rate from electric circuit. The method was applied to the thermal design of a new switch mode power supply (SMPS). The analysis was carried out using a computational fluid dynamics (CFD) code (Icepak: trademark of Fluent Inc.). In reducing the actual structural organizations of the printed circuit board (PCB) and the power semiconductor devices to simpler models the method of experimental design (MED) was employed. Following the prescription of MED the PCB was modeled as a simple plate having a thermal conductivity of epoxy resin. The power semiconductor devices were modeled by hexahedral resistance network. The heat sources are a field effect transistor (FET) and a diode, and computation of the power loss from them is described. The difference between measured and calculated temperatures on the power semiconductor devices was found to be within approximately 10 K.

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