A Novel Integrated High Precision Vacuum Microelectronic Accelerometer

In this paper, a novel integrated high precision vacuum microelectronic accelerometer is put forward based on the theory of field emission, the accelerometer consists of sensitive structure and interface ASIC. The sensitive structure has a mass of a cathode cone tips array, a folded beam, an emitter electrode and a feedback electrode. The sensor is fabricated on a double side polished (1 0 0) N-type silicon wafer, the tips array of cathode are shaped by wet etching with HNA (HNO3, HF and CH3COOH) and metalized by TiW/Au thin film. The structure of sensor is released by ICP process finally. The interface ASIC was designed and fabricated based on the P-JFET high voltage bipolar process. The accelerometer is tested through static field rollover test, and the test results show the integrated vacuum microelectronic accelerometer has good performances, which sensitivity is 3.081V/g and non-linearity is 0.84% in the measuring range of −1g~1g.

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A Novel, Hybrid-Integrated, High-Precision, Vacuum Microelectronic Accelerometer with Nano-Field Emission Tips

Micromachines ◽

10.3390/mi9100481 ◽

2018 ◽

Vol 9 (10) ◽

pp. 481 ◽

Cited By ~ 3

Author(s):

Haitao Liu ◽

Kai Wei ◽

Zhengzhou Li ◽

Wengang Huang ◽

Yi Xu ◽

...

Keyword(s):

Field Emission ◽

High Precision ◽

Integrated Circuit ◽

Inductively Coupled Plasma ◽

Noise Spectrum ◽

Static Field ◽

Inductively Coupled ◽

Spectrum Density ◽

Vacuum Microelectronic ◽

Sensitive Structure

In this paper, a novel, hybrid-integrated, high-precision, vacuum microelectronic accelerometer is put forward, based on the theory of field emission; the accelerometer consists of a sensitive structure and an ASIC interface (application-specific integrated circuit). The sensitive structure has a cathode cone tip array, a folded beam, an emitter electrode, and a feedback electrode. The sensor is fabricated on a double-sided polished (1 0 0) N-type silicon wafer; the tip array of the cathode is shaped by wet etching with HNA (HNO3, HF, and CH3COOH) and metalized by TiW/Au thin film. The structure of the sensor is finally released by the ICP (inductively coupled plasma) process. The ASIC interface was designed and fabricated based on the P-JFET (Positive-Junction Field Effect Transistor) high-voltage bipolar process. The accelerometer was tested through a static field rollover test, and the test results show that the hybrid-integrated vacuum microelectronic accelerometer has good performance, with a sensitivity of 3.081 V/g, the non-linearity is 0.84% in the measuring range of −1 g~1 g, the average noise spectrum density value is 36.7 μV/ Hz in the frequency range of 0–200 Hz, the resolution of the vacuum microelectronic accelerometer can reach 1.1 × 10−5 g, and the zero stability reaches 0.18 mg in 24 h.

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Modulation of field emission current from ZnO nanowires by high voltage a-Si thin film transistor

2015 28th International Vacuum Nanoelectronics Conference (IVNC) ◽

10.1109/ivnc.2015.7225591 ◽

2015 ◽

Cited By ~ 1

Author(s):

X. M. Chen ◽

H. Ou ◽

X. M. Song ◽

W. Q. Chen ◽

J. C. She ◽

...

Keyword(s):

Thin Film ◽

Field Emission ◽

High Voltage ◽

Thin Film Transistor ◽

Zno Nanowires ◽

Emission Current ◽

Field Emission Current ◽

Si Thin Film

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A High-Voltage Terminal for a Field-Emission Gun

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009539x ◽

1972 ◽

Vol 30 ◽

pp. 428-429

Author(s):

N. F. Ziegler

Keyword(s):

Field Emission ◽

High Voltage ◽

Atmospheric Pressure ◽

Power Supplies ◽

High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

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