scholarly journals Fabrication of a Functionally Gradient Material of TiC-SiC System by Chemical Vapor Deposition

1992 ◽  
Vol 100 (1165) ◽  
pp. 1117-1121 ◽  
Author(s):  
Chihiro KAWAI ◽  
Jun-ichi TERAKI ◽  
Tohru HIRANO ◽  
Toshio NOMURA
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gradient Material ◽  
Functionally Gradient Material ◽  
Functionally Gradient

Progress in Research on Mo-MoSi2 Functionally Gradient Material

2011 ◽  
Vol 287-290 ◽  
pp. 636-641
Author(s):  
Ying Yi Zhang ◽  
Yun Gang Li ◽  
Jin Chen ◽  
Ying Tian
Keyword(s):  
Room Temperature ◽  
Preparation Method ◽  
Chemical Vapor ◽  
Gradient Material ◽  
High Temperature Strength ◽  
Coating Quality ◽  
Functionally Gradient Material ◽  
Development Status ◽  
Cvd Method ◽  
Functionally Gradient

By summarizing the research and development status in recent years, this thesis especially introduces the preparation method and enhancement mechanism of the functionally gradient material of Mo-MoSi2. Results of experiments show that: alloying and compounding can significantly improve the room-temperature brittleness and high temperature strength；and the application of Chemical Vapor Deposition (CVD) method in the preparation of Mo-MoSi2multiphase anti-oxidation coating, has obvious advantages in that it reduces cracking and improves the coating quality. Finally, the developing trend of Mo-MoSi2and its prospected difficulties and hot issues are also pointed out.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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