scholarly journals Electric field assisted copper diffusion in soda-lime glass: a study of ion migration, activation energy and ion interactions

2020 ◽  
Vol 128 (4) ◽  
pp. 186-193 ◽  
Author(s):  
Noboru TAKAMURE ◽  
David Robert MCKENZIE
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ion Migration ◽  
Copper Diffusion ◽  
Ion Interactions

An optical investigation of silver nanoclusters composite soda-lime glass formed by electric field assisted diffusion

2017 ◽  
Vol 32 (2) ◽  
pp. 338-344
Author(s):  
Junhong Zhao ◽  
Jian Lin ◽  
Wenjun Zhang ◽  
Shuo Zhang ◽  
Guannan Zhao ◽  
...  
Keyword(s):  
Electric Field ◽  
Soda Lime ◽  
Silver Nanoclusters ◽  
Soda Lime Glass ◽  
Optical Investigation

scholarly journals Copper diffusion in ion-exchanged soda-lime glass

2005 ◽  
Vol 81 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
F. Gonella ◽  
A. Quaranta ◽  
S. Padovani ◽  
C. Sada ◽  
F. D’Acapito ◽  
...  
Keyword(s):  
Soda Lime ◽  
Soda Lime Glass ◽  
Copper Diffusion

Low temperature ion substitution in soda-lime glass by means of an electric field

1982 ◽  
Vol 87 (4) ◽  
pp. 285-292 ◽  
Author(s):  
G.H. Chartier ◽  
V. Neuman ◽  
O. Parriaux ◽  
C.W. Pitt
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ion Substitution

Chemical Vapor Deposition (CVD) of Tungsten Nitride for Copper Diffusion Barriers

2001 ◽  
Vol 714 ◽  
Author(s):  
Roy G. Gordon ◽  
Jeffrey Barton ◽  
Seigi Suh
Keyword(s):  
Chemical Vapor ◽  
Soda Lime ◽  
Diffusion Barriers ◽  
Soda Lime Glass ◽  
Tungsten Nitride ◽  
X Ray Diffraction ◽  
Copper Diffusion ◽  
Free Process ◽  
Halogen Free ◽  
Substrate Temperatures

ABSTRACTA new process was developed for deposition of the tungsten nitride at moderate substrate temperatures (350-400 °C). The tungsten source bis (tert-butylamido)bis(tertbutylimido) tungsten, (tBuNH)2(tBuN)2W, reacts with ammonia in a low-pressure CVD reactor. Growth rates ranged from about 0.6 to 4.1 nm per minute. The stoichiometry of the films varied from WN1.2O1.7 to WN1.6o0.25, depending mainly on deposition temperature. The films are amorphous by X-ray diffraction, and smooth by scanning electron microscopy. Step coverage is nearly 100% in vias with an aspect ratio of 6:1 for films deposited at 400 °C or lower. Barriers 45 nm thick resist diffusion of copper up to temperatures of 600 °C. Adhesion is strong to all substrates tested, including silicon, silicon dioxide, soda-lime glass, glassy carbon, aluminum and stainless steel. This new halogen-free process avoids halogen contamination of films and corrosion of equipment. Uniformity of thickness and stoichiometry are readily achieved. This process is a promising method for forming copper diffusion barriers in future generations of microelectronics.

Electric field distribution and near-surface modifications in soda-lime glass submitted to a dc potential

1993 ◽  
Vol 159 (3) ◽  
pp. 204-212 ◽  
Author(s):  
C.M. Lepienski ◽  
J.A. Giacometti ◽  
G.F. Leal Ferreira ◽  
F.L. Freire ◽  
C.A. Achete
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Surface Modifications ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Near Surface ◽  
Dc Potential
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