scholarly journals GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

2021 ◽  
Author(s):  
Marius Zehender ◽  
Simon Svatek ◽  
Myles Steiner ◽  
Ivan Garcia ◽  
Pablo Garcia-Linares ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Open Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Power Extraction ◽  
Current Voltage ◽  
Double Junction ◽  
New Perspective ◽  
Interconnecting Layers

Abstract We demonstrate a heterojunction bipolar transistor solar cell (HBTSC), a device that exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band-gap energies, while it has a lower fabrication and operation complexity than other multi-terminal architectures: it can produce independent power extraction from the two junctions without the need for extra isolating or interconnecting layers between them. The two junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The HBTSC opens a new perspective in the understanding of multi-junction devices, and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V-on-silicon tandems.

scholarly journals GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

2020 ◽  
Author(s):  
Marius Zehender ◽  
Simon Svatek ◽  
Myles Steiner ◽  
Ivan Garcia ◽  
Pablo Linares ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
High Energy ◽  
Open Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Layer ◽  
Energy Yield ◽  
Power Extraction ◽  
New Perspective

Abstract We demonstrate a novel multijunction architecture, the heterojunction bipolar transistor solar cell (HBTSC), which exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band gap energies, while it reduces the fabrication and operation complexity with respect to other multi-terminal devices because, for example, it can produce independent power extraction from the two junctions without the need for extra layers for their isolation or inter-connection. The top and bottom junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The voltage difference between the two junctions is notable considering that they share a thin (< 600 nm) GaInP layer which contributes to the photogeneration of both junctions. This can be explained by a gradient in the minority carrier quasi-Fermi level within the base layer, which is compatible with a high fill factor. We also offer a technological solution for contacting the intermediate layer and study the effect of series resistance on the device performance. The HBTSC opens a new perspective in the understanding of multi-junction devices and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V on silicon tandems with parallel/series interconnection for high energy yield.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

Organic and nano-structured composite photovoltaics: An overview

2005 ◽  
Vol 20 (12) ◽  
pp. 3167-3179 ◽  
Author(s):  
Sophie E. Gledhill ◽  
Brian Scott ◽  
Brian A. Gregg
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Organic Materials ◽  
Low Cost ◽  
Open Circuit ◽  
Charge Generation ◽  
Dye Sensitized ◽  
Excitonic Solar Cells

Organic photovoltaic devices are poised to fill the low-cost, low power niche in the solar cell market. Recently measured efficiencies of solid-state organic cells are nudging 5% while Grätzel’s more established dye-sensitized solar cell technology is more than double this. A fundamental understanding of the excitonic nature of organic materials is an essential backbone for device engineering. Bound electron-hole pairs, “excitons,” are formed in organic semiconductors on photo-absorption. In the organic solar cell, the exciton must diffuse to the donor–accepter interface for simultaneous charge generation and separation. This interface is critical as the concentration of charge carriers is high and recombination here is higher than in the bulk. Nanostructured engineering of the interface has been utilized to maximize organic materials properties, namely to compensate the poor exciton diffusion lengths and lower mobilities. Excitonic solar cells have different limitations on their open-circuit photo-voltages due to these high interfacial charge carrier concentrations, and their behavior cannot be interpreted as if they were conventional solar cells. This article briefly reviews some of the differences between excitonic organic solar cells and conventional inorganic solar cells and highlights some of the technical strategies used in this rapidly progressing field, whose ultimate aim is for organic solar cells to be a commercial reality.

scholarly journals Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Grace Rajan ◽  
Krishna Aryal ◽  
Shankar Karki ◽  
Puruswottam Aryal ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Open Circuit ◽  
Ex Situ ◽  
Photovoltaic Application ◽  
Current Voltage ◽  
Stage Process ◽  
Cigs Solar Cells ◽  
The Cost

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

scholarly journals IonMonger: a free and fast planar perovskite solar cell simulator with coupled ion vacancy and charge carrier dynamics

2019 ◽  
Vol 18 (4) ◽  
pp. 1435-1449 ◽  
Author(s):  
N. E. Courtier ◽  
J. M. Cave ◽  
A. B. Walker ◽  
G. Richardson ◽  
J. M. Foster
Keyword(s):  
Solar Cell ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Temporal Integration ◽  
Differential Algebraic Equations ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Algebraic Equations ◽  
Perovskite Layer ◽  
Current Voltage

Abstract Details of an open-source planar perovskite solar cell simulator, which includes ion vacancy migration within the perovskite layer coupled to charge carrier transport throughout the perovskite and adjoining transport layers in one dimension, are presented. The model equations are discretised in space using a finite element scheme, and temporal integration of the resulting system of differential algebraic equations is carried out in MATLAB. The user is free to modify device parameters, as well as the incident illumination and applied voltage. Time-varying voltage and/or illumination protocols can be specified, e.g. to simulate current–voltage sweeps, or to track the open-circuit conditions as the illumination is varied. Typical simulations, e.g. current–voltage sweeps, only require computation times of seconds to minutes on a modern personal computer. An example set of hysteretic current–voltage curves is presented.

scholarly journals Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

2019 ◽  
Author(s):  
Marius H. Zehender ◽  
Ivan Garcia ◽  
Simon A. Svatek ◽  
Myles A. Steiner ◽  
Pablo Garcia-Linares ◽  
...  
Keyword(s):  
Solar Cell ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

2007 ◽  
Vol 556-557 ◽  
pp. 1039-1042 ◽  
Author(s):  
Koichi Amari ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electrical Properties ◽  
Electronic Properties ◽  
Electron Injection ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
View Point ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Order Of Magnitude ◽  
Heterojunction Diodes

The electrical properties of n+-GaN/p+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p+-SiC epilayers (Na) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with Na ~ 1x1019 cm-3 were dominated by tunneling-assisted current. The diodes with Na ~ 1x1018 cm-3 exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (Na<1016cm-3), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration.

Sign in / Sign up

Export Citation Format

Share Document