scholarly journals The Design of the Emission Layer for Electron Multipliers

Author(s):  
Yuman Wang ◽  
Baojun Yan ◽  
Kaile Wen ◽  
Shulin Liu ◽  
Ming Qi ◽  
...  

Abstract The electron multipliers gain is closely related to the secondary electron emission coefficient (SEE) of the emission layer materials. The SEE is closely related to the thickness of the emission layer. If the emission layer is thin, the low SEE causes the low gain of electron multipliers. If the emission layer is thick, the conductive layer can't timely supplement charge to the emission layer, the electronic amplifier gain is low too. The electron multipliers usually choose Al2O3 and MgO film as the emission layer because of the high SEE level. MgO easy deliquescence into Mg(OH)2 resulting in the lower SEE level. The SEE level of Al2O3 is lower than MgO, but Al2O3 is stable. We designed a spherical system for testing the SEE level of materials, and proposed to use lowenergy secondary electrons instead of low-energy electron beam for neutralization to measuring the SEE level of Al2O3, MgO, MgO/Al2O3, Al2O3/MgO, and precisely control the film thickness by using atomic layer deposition (ALD). We propose to compare the SEE under the adjacent incident electrons energy to partition the SEE value of the material, and obtain four empirical formula for the relationship between SEE and thickness. Through experiments and calculations, we put forward a new emission layer for electron multipliers, including 2~3 nm Al2O3 buffer layer, 9nm MgO main-body layer, 1nm protective layer or 0.3nm enhancement layer. We can apply this new emission layer to channel electron multiplier (CEM), microchannel plate (MCP), separate electron multiplier.

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yuman Wang ◽  
Baojun Yan ◽  
Kaile Wen ◽  
Shulin Liu ◽  
Ming Qi ◽  
...  

AbstractThe electron multipliers gain is closely related to the secondary electron emission coefficient (SEE) of the emission layer materials. The SEE is closely related to the thickness of the emission layer. If the emission layer is thin, the low SEE causes the low gain of electron multipliers. If the emission layer is thick, the conductive layer can't timely supplement charge to the emission layer, the electronic amplifier gain is low too. The electron multipliers usually choose Al2O3 and MgO film as the emission layer because of the high SEE level. MgO easy deliquescence into Mg(OH)2 Mg2(OH)2CO3 and MgCO3 resulting in the lower SEE level. The SEE level of Al2O3 is lower than MgO, but Al2O3 is stable. We designed a spherical system for testing the SEE level of materials, and proposed to use low-energy secondary electrons instead of low-energy electron beam for neutralization to measuring the SEE level of Al2O3, MgO, MgO/Al2O3, Al2O3/MgO, and precisely control the film thickness by using atomic layer deposition. We propose to compare the SEE under the adjacent incident electrons energy to partition the SEE value of the material, and obtain four empirical formulas for the relationship between SEE and thickness. Since the main materials that cause the decrease in SEE are Mg2(OH)2CO3 and MgCO3, we use the C element atomic concentration measured by XPS to study the deliquescent depth of the material. We propose to use the concept of transition layer for SEE interpretation of multilayer materials. Through experiments and calculations, we put forward a new emission layer for electron multipliers, including 2–3 nm Al2O3 buffer layer, 5–9 nm MgO main-body layer, 1 nm Al2O3 protective layer or 0.3 nm Al2O3 enhancement layer. We prepared this emission layer to microchannel plate (MCP), which significantly improved the gain of MCP. We can also apply this new emission layer to channel electron multiplier and separate electron multiplier.


1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7015-7018 ◽  
Author(s):  
Eun-Ha Choi ◽  
Hyun-Joo Oh ◽  
Young-Guon Kim ◽  
Jae-Jun Ko ◽  
Jae-Yong Lim ◽  
...  

2000 ◽  
Vol 647 ◽  
Author(s):  
Kazuo Uetani ◽  
Hiroshi Kajiyama ◽  
Akira Kato ◽  
Isao Tokomoto ◽  
Yasuhiro Koizumi ◽  
...  

AbstractMgO thin films as a protective layer in plasma display panels (PDPs) were deposited by an advanced ion-plating (AIP) apparatus that we had developed. The AIP method enables plasma operation at low-pressures of 10−3 Pa. The MgO thin films were mainly (111) oriented with a small amount of randomly oriented textures. The preferred orientation of the films was dependent on deposition conditions; oxygen content and substrate temperature. Fine columnar structures grew with sharp apexes at the film surface. Secondary electron emission coefficient from a film deposited by the AIP method was higher than that by a conventional electron beam evaporation method. The MgO protective layer could be expected to improve PDPs by our AIP deposition.


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