Ion-Plating Deposition of MgO Protective Layer for AC-Plasma Display Panels

2000 ◽  
Vol 647 ◽  
Author(s):  
Kazuo Uetani ◽  
Hiroshi Kajiyama ◽  
Akira Kato ◽  
Isao Tokomoto ◽  
Yasuhiro Koizumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Electron Emission ◽  
Film Surface ◽  
Protective Layer ◽  
Electron Beam Evaporation ◽  
Ion Plating ◽  
Plasma Display Panels ◽  
Secondary Electron Emission Coefficient ◽  
Plasma Display ◽  
Low Pressures

AbstractMgO thin films as a protective layer in plasma display panels (PDPs) were deposited by an advanced ion-plating (AIP) apparatus that we had developed. The AIP method enables plasma operation at low-pressures of 10−3 Pa. The MgO thin films were mainly (111) oriented with a small amount of randomly oriented textures. The preferred orientation of the films was dependent on deposition conditions; oxygen content and substrate temperature. Fine columnar structures grew with sharp apexes at the film surface. Secondary electron emission coefficient from a film deposited by the AIP method was higher than that by a conventional electron beam evaporation method. The MgO protective layer could be expected to improve PDPs by our AIP deposition.

Effect of TiO2 Addition on the Secondary Electron Emission and Discharge Properties of MgO Protective Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Younghyun Kim ◽  
Rakhwan Kim ◽  
Hee Jae Kim ◽  
Hyeongtag Jeon ◽  
Jong-Wan Park
Keyword(s):  
Band Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Film Surface ◽  
Protective Layer ◽  
Discharge Voltage ◽  
Plasma Display Panel ◽  
Plasma Display ◽  
Deposited Films

ABSTRACTSecondary electron emission from a cathode material in AC PDP (Plasma Display Panel) is dominated by potential emission mechanism, which is sensitive to band structure of a protective layer. Therefore, the secondary electron emission property can be modified by a change in the energy band structure of the protective layer. Mg2-2xTixO2 films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with the increasing TiO2 content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The Mg2-2xTixO2 films, however, had the crystallinity with (311) preferred orientation. The stress relaxation, when the [TiO2/(MgO+TiO2)] ratio in the evaporation starting materials was 0.15, seems to be related to inhomogeneous film surface due to an excessive addition of TiO2 to MgO. When the [TiO2/(MgO+TiO2)] ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

Investigation of effects of ion beam irradiation on properties of magnesium oxide films

2005 ◽  
Vol 908 ◽  
Author(s):  
Yasuhiko Morimoto ◽  
Yoshikazu Tanaka ◽  
Ari Ide-Ektessabi
Keyword(s):  
Magnesium Oxide ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Ion Beam Irradiation ◽  
Improve Performance ◽  
Ion Beam Assisted Deposition ◽  
Plasma Display Panels ◽  
Secondary Electron Emission Coefficient ◽  
Plasma Display ◽  
Alternative Current

AbstractMagnesium oxide (MgO) film is commonly used as protecting layer for alternative current plasma display panels (AC-PDPs). Low energy ion induced secondary electron emission coefficient (γ) is one of the important factors to improve performance of AC-PDPs. The aim of this study is to prepare MgO films with high γ using ion beam assisted deposition (IBAD). The film composition, density, and crystal orientation were also investigated. The results suggest that MgO films with high γ can be obtained using IBAD. On the other hand, as the assisted ion beam energy increased to more than 500eV during deposition, (200)-oriented film with low γ grew preferentially and then the γ decreased.

Enhanced Secondary Electron Emission Yield of MgO Thin Films by Vapor Chopping Technique for Plasma Display Panels

2011 ◽  
Vol 6 (2) ◽  
pp. 156-161 ◽  
Author(s):  
Sikandar H. Tamboli ◽  
Chandra Bhal Singh ◽  
R. B. Patil ◽  
Vijaya Puri ◽  
R. K. Puri ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Plasma Display Panels ◽  
Plasma Display ◽  
Emission Yield

Luminous efficiency of AC Plasma Display Panels with MgO–TiO2

2001 ◽  
Vol 672 ◽  
Author(s):  
Younghyun Kim ◽  
Rakhwan Kim ◽  
Yonguk Lee ◽  
Seonghoon Jung ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Protective Layer ◽  
Luminous Efficiency ◽  
Operating Voltage ◽  
Plasma Display Panels ◽  
Plasma Display ◽  
Better Than

ABSTRACTIn order to improve both the operating voltage and the luminous efficiency of the protective layer for AC Plasma Display Panels, controlled amount of TiO2 was added to the pure MgO. The effect of the TiO2 addition on both the electrical properties (firing voltage & sustain voltage) and the luminous efficiency of the Mg2−2xTixO2 films deposited by e-beam evaporation was investigated. By addition of a proper amount of TiO2 to MgO, the dielectric constant of protective layer was increased to the 11, which has higher than that of bulk MgO. When the composition of Ti in the thin films was about 2.45at%, firing and sustain voltages were very low. With this composition, the luminous efficiency characteristics were much better than that of any other protective layer. When compared to that of the conventional MgO protective layer, the luminous efficiency showed an increase by 28%.

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