scholarly journals Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

2021 ◽  
Author(s):  
Yue Li ◽  
Jun Fu ◽  
Xiaoyu Mao ◽  
Chen Chen ◽  
Heng Liu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Photovoltaic Effect ◽  
Free Path Length ◽  
Photocurrent Density ◽  
Ferroelectric Materials ◽  
Two Dimensional ◽  
Dramatic Decrease ◽  
Photocurrent Generation ◽  
Ferroelectric Perovskite ◽  
2D To 3D

Abstract The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottey barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progresses have shown a promising route to surpass this limit via the bulk photovoltaic effect (BPVE) for crystals without inversion symmetry. Here we report the BPVE in two-dimensional (2D) ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The BPVE is inherently associated to the room-temperature polar ordering in 2D CuInP2S6. We also demonstrate a crossover from 2D to 3D BPVE material with the observation of a dramatic decrease in photocurrent density when the thickness of the 2D material exceeds the free path length (\({l}_{0}\)) at around 40 nm. This work spotlights the potential application of ultrathin 2D ferroelectric materials for the third-generation photovoltaic cells.

scholarly journals Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yue Li ◽  
Jun Fu ◽  
Xiaoyu Mao ◽  
Chen Chen ◽  
Heng Liu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Photovoltaic Effect ◽  
Three Dimensional ◽  
Free Path Length ◽  
Photocurrent Density ◽  
Ferroelectric Materials ◽  
Two Dimensional ◽  
Dramatic Decrease ◽  
Photocurrent Generation ◽  
Ferroelectric Perovskite

AbstractThe photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

scholarly journals Polymorphic gallium for active resonance tuning in photonic nanostructures: from bulk gallium to two-dimensional (2D) gallenene

Nanophotonics ◽  
2020 ◽  
Vol 9 (14) ◽  
pp. 4233-4252
Author(s):  
Yael Gutiérrez ◽  
Pablo García-Fernández ◽  
Javier Junquera ◽  
April S. Brown ◽  
Fernando Moreno ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Phase Change Materials ◽  
Two Dimensional ◽  
Active Materials ◽  
Promising Candidate ◽  
Plasmonic Structures ◽  
Resonance Tuning ◽  
The Many ◽  
Optical Behavior

AbstractReconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very promising candidate for adaptive plasmonics and reconfigurable photonics applications. The Ga sp-metal is widely known as a liquid metal at room temperature. In addition to the many other compelling attributes of nanostructured Ga, including minimal oxidation and biocompatibility, its six phases have varying degrees of metallic character, providing a wide gamut of electrical conductivity and optical behavior tunability. Here, the dielectric function of the several Ga phases is introduced and correlated with their respective electronic structures. The key conditions for optimal optical modulation and switching for each Ga phase are evaluated. Additionally, we provide a comparison of Ga with other more common phase-change materials, showing better performance of Ga at optical frequencies. Furthermore, we first report, to the best of our knowledge, the optical properties of liquid Ga in the terahertz (THz) range showing its broad plasmonic tunability from ultraviolet to visible-infrared and down to the THz regime. Finally, we provide both computational and experimental evidence of extension of Ga polymorphism to bidimensional two-dimensional (2D) gallenene, paving the way to new bidimensional reconfigurable plasmonic platforms.

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

2021 ◽  
Author(s):  
Haohao Sheng ◽  
Haoxiang Long ◽  
Guanzhen Zou ◽  
Dongmei Bai ◽  
Junting Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Room Temperature ◽  
Phonon Transport ◽  
Two Dimensional

Two-Dimensional Room-Temperature Giant Antiferrodistortive SrTiO3 at a Grain Boundary

2021 ◽  
Vol 126 (22) ◽  
Author(s):  
Bo Han ◽  
Ruixue Zhu ◽  
Xiaomei Li ◽  
Mei Wu ◽  
Ryo Ishikawa ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Two Dimensional

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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