Polarization Domain Dynamics of Barium Titanate Ultrathin Films Using Piezoresponse Force Microscopy.

Abstract Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate films grown on strontium titanate substrates by molecular beam epitaxy. The electric field due to the cone of the atomic force microscope tip is proposed as the dominant electric field of the tip in thin films for domain expansion at lateral distances greater than about one tip diameter away from the tip. The velocity of the domain wall under the applied electric field by the tip in barium titanate for thin films (less than 40 nm) followed an expanding process given by Merz’s law. The material constants in a fit of the data to Merz’s law for very thin films are reported as about 4.2 KV/cm for activation field, Ea, and 0.05 nm/s for limiting velocity, v∞. These material constants showed a dependence on the level of strain in the films but no fundamental dependence on thickness.

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Influence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O3 Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy

Materials ◽

10.3390/ma10111258 ◽

2017 ◽

Vol 10 (11) ◽

pp. 1258 ◽

Cited By ~ 2

Author(s):

Kunyu Zhao ◽

Huizhu Yu ◽

Jian Zou ◽

Huarong Zeng ◽

Guorong Li ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Electrical Properties ◽

Oxygen Pressure ◽

Piezoresponse Force Microscopy ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Domain Dynamics

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Ferroelectric domain-wall logic units

10.21203/rs.3.rs-1175749/v1 ◽

2021 ◽

Author(s):

Jing Wang ◽

Jing Ma ◽

Houbing Huang ◽

Ji Ma ◽

Hasnain Jafri ◽

...

Keyword(s):

Domain Wall ◽

Electric Field ◽

Domain Walls ◽

Logic Gates ◽

Piezoresponse Force Microscopy ◽

Ferroelectric Domain ◽

Conduction Path ◽

Conductive Atomic Force Microscopy ◽

Flexible Control ◽

Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

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Domain rearrangement during nanoindentation in single-crystalline barium titanate measured by atomic force microscopy and piezoresponse force microscopy

Applied Physics Letters ◽

10.1063/1.1920410 ◽

2005 ◽

Vol 86 (19) ◽

pp. 192903 ◽

Cited By ~ 34

Author(s):

G. A. Schneider ◽

T. Scholz ◽

J. Muñoz-Saldaña ◽

M. V. Swain

Keyword(s):

Atomic Force Microscopy ◽

Barium Titanate ◽

Piezoresponse Force Microscopy ◽

Single Crystalline ◽

Force Microscopy ◽

Atomic Force

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Atomic Force Microscopy Studies of Barium Titanate Thin Films Prepared by Laser Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/14/2/016 ◽

1997 ◽

Vol 14 (2) ◽

pp. 134-137 ◽

Cited By ~ 7

Author(s):

Cui Da-fu ◽

Lü Hui-bin ◽

Wang Hui-sheng ◽

Chen Zheng-hao ◽

Zhou Yue-liang ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Molecular Beam Epitaxy ◽

Barium Titanate ◽

Molecular Beam ◽

Force Microscopy ◽

Laser Molecular Beam Epitaxy ◽

Atomic Force

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Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process

Materials ◽

10.3390/ma11122418 ◽

2018 ◽

Vol 11 (12) ◽

pp. 2418 ◽

Cited By ~ 2

Author(s):

Wanli Zhang ◽

Yanhu Mao ◽

Shaoan Yan ◽

Yongguang Xiao ◽

Minghua Tang ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Domain Wall ◽

Sol Gel ◽

Piezoresponse Force Microscopy ◽

Fatigue Tests ◽

Temperature Dependent ◽

Spectra Analysis ◽

Increasing Temperature ◽

Domain Dynamics

Bi4Ti2.99Mn0.01O12 (BTM) thin films with different ratio of neodymium (Nd) doping were prepared on Pt(111)/Ti/SiO2/Si(100) substrates through a sol-gel method. The effects of Nd doping on domain dynamics and temperature-dependent fatigue behaviors of BTM thin films were systematically studied. The polarization fatigues of BTM (not doped) and Bi3.5Nd0.5Ti2.99Mn0.01O12 (BNTM05) thin films first get better with the increasing temperature (T) from 300 to 350 K and then become worse from 350 to 400 K, while Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM85) thin films show enhanced fatigue endurance from 300 to 400 K. It can be shown that the long-range diffusion of oxygen vacancies in BTM thin film happens more easily through the impedance spectra analysis with T from 300 to 475 K, which can be verified by a lower activation energies (0.13–0.14 eV) compared to those of BNTM05 and BNTM85 (0.17–0.21 eV). Using a temperature-dependent piezoresponse force microscopy (PFM), we have found more responsive domain fragments in Nd-substituted films. The microscopic domain evolution from 298 to 448 K was done to further explain that the domain wall unpinning effect has been enhanced with increasing T. The correlation between microscopic domain dynamics and macroscopic electrical properties clearly demonstrates the effects of charged domain wall in Nd-doped BTM thin films during the fatigue tests.

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Atomic force microscopy-induced electric field in ferroelectric thin films

Journal of Applied Physics ◽

10.1063/1.1603345 ◽

2003 ◽

Vol 94 (6) ◽

pp. 4053-4059 ◽

Cited By ~ 18

Author(s):

Biao Wang ◽

C. H. Woo

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Electric Field ◽

Ferroelectric Thin Films ◽

Force Microscopy ◽

Atomic Force

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Single- and Multi-Frequency Detection of Surface Displacements via Scanning Probe Microscopy

Microscopy and Microanalysis ◽

10.1017/s1431927614013622 ◽

2015 ◽

Vol 21 (1) ◽

pp. 154-163 ◽

Cited By ~ 15

Author(s):

Konstantin Romanyuk ◽

Sergey Yu. Luchkin ◽

Maxim Ivanov ◽

Arseny Kalinin ◽

Andrei L. Kholkin

Keyword(s):

Electric Field ◽

Piezoresponse Force Microscopy ◽

Single Frequency ◽

Frequency Method ◽

Force Microscopy ◽

Frequency Detection ◽

Atomic Force ◽

Surface Displacements ◽

Measuring Surface ◽

First Contact

AbstractPiezoresponse force microscopy (PFM) provides a novel opportunity to detect picometer-level displacements induced by an electric field applied through a conducting tip of an atomic force microscope (AFM). Recently, it was discovered that superb vertical sensitivity provided by PFM is high enough to monitor electric-field-induced ionic displacements in solids, the technique being referred to as electrochemical strain microscopy (ESM). ESM has been implemented only in multi-frequency detection modes such as dual AC resonance tracking (DART) and band excitation, where the response is recorded within a finite frequency range, typically around the first contact resonance. In this paper, we analyze and compare signal-to-noise ratios of the conventional single-frequency method with multi-frequency regimes of measuring surface displacements. Single-frequency detection ESM is demonstrated using a commercial AFM.

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