Direct Integration of Ferroelectric LSCO/PNZT Capacitors on Si with Conducting Barrier Layers

2001 ◽  
Author(s):  
R. Ramesh
1996 ◽  
Vol 68 (10) ◽  
pp. 1350-1352 ◽  
Author(s):  
A. M. Dhote ◽  
S. Madhukar ◽  
W. Wei ◽  
T. Venkatesan ◽  
R. Ramesh ◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.


Author(s):  
W. -P. Breugem ◽  
P. Chang ◽  
C. J. Jang ◽  
J. Mignot ◽  
W. Hazeleger

2021 ◽  
Vol 19 (11) ◽  
pp. 2473-2480
Author(s):  
Jigarkumar K. Vankar ◽  
Ankush Gupta ◽  
Jaydeepbhai P. Jadav ◽  
Shankara H. Nanjegowda ◽  
Guddeangadi N. Gururaja

The direct integration of sulphur and amine groups with 1,1-dibromoalkenes for thioamide synthesis has been achieved in an aqueous medium.


Author(s):  
Vaibhav Gupta ◽  
Mark L. Adams ◽  
John A. Sellers ◽  
Noah Niedzwiecki ◽  
Nick Rush ◽  
...  

2021 ◽  
Vol 182 ◽  
pp. 411-427
Author(s):  
Nadirah Mohd Nasir ◽  
Zanariah Abdul Majid ◽  
Fudziah Ismail ◽  
Norfifah Bachok

2007 ◽  
Vol 84 (11) ◽  
pp. 2669-2674 ◽  
Author(s):  
C. Zhao ◽  
Zs. Tőkei ◽  
A. Haider ◽  
S. Demuynck

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