3-5 Micrometers Room Temperature Operated CW Laser Diodes Based on Novel InGaAsNSb Material System

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l551 ◽

1985 ◽

Vol 24 (Part 2, No. 7) ◽

pp. L551-L552 ◽

Cited By ~ 10

Author(s):

Sadao Fujii ◽

Shiro Sakai ◽

Masayoshi Umeno

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Room Temperature Operation

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Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004002 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Masayoshi Koike ◽

Shiro Yamasaki ◽

Yuta Tezen ◽

Seiji Nagai ◽

Sho Iwayama ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Crystal Defects ◽

Blue Laser ◽

Buffer Layers ◽

Continuous Wave Laser ◽

Cw Operation ◽

First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Effect of LiNbO3 on the Electrocaloric Performance of 0.94BNT-0.06BT Ceramic Materials

10.21203/rs.3.rs-437223/v1 ◽

2021 ◽

Author(s):

Jing Chen ◽

lei Wu ◽

Luanfan Duan ◽

Dongren Liu

Keyword(s):

Ceramic Material ◽

Room Temperature ◽

Ceramic Materials ◽

Adiabatic Temperature ◽

Cooling Effect ◽

Material System ◽

Temperature Changes ◽

Cooling Temperature ◽

Temperature Range

Abstract Considering that the electric refrigeration temperature range of 0.94BNT-0.06BT ceramic materials is 100 ~ 140℃, the electric refrigeration performance of the 0.94BNT-0.06BT ceramic material system was modified by LiNbO3 doping to reduce the cooling temperature. As a result, the refrigeration temperature range of the 0.94BNT-0.06BT ceramic material system was lowered to 25 ~ 80℃, achieving its cooling effect near room temperature, and in this temperature range, the adiabatic temperature changes ∆T > 0.6K.

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