Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

2013 ◽  
Author(s):  
Iskander G. Batyrev ◽  
Chi-Chin Wu ◽  
Peter W. Chung ◽  
N. S. Weingarten ◽  
Kenneth A. Jones
1997 ◽  
Vol 71 (16) ◽  
pp. 2289-2291 ◽  
Author(s):  
A. T. Sowers ◽  
J. A. Christman ◽  
M. D. Bremser ◽  
B. L. Ward ◽  
R. F. Davis ◽  
...  

1998 ◽  
Vol 10 (6) ◽  
pp. 1613-1622 ◽  
Author(s):  
Jerzy F. Janik ◽  
Richard L. Wells ◽  
Jeffery L. Coffer ◽  
John V. St. John ◽  
William T. Pennington ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.


2019 ◽  
Vol 61 (12) ◽  
pp. 2286-2290
Author(s):  
E. N. Mokhov ◽  
A. A. Wol’fson ◽  
O. P. Kazarova

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