Presented is a study on the original preparation of individual and in situ intimately mixed composite nanocrystalline powders in the titanium nitride-aluminum nitride system, Ti:Al = 1:1 (at.), which were used in high pressure (7.7 GPa) and high temperature (650 and 1200 °C) sintering with no binding additives for diverse individual and composite nanoceramics. First, variations in precursor processing pathways and final nitridation temperatures, 800 and 1100 °C, afforded a pool of mixed in the nanosized regime cubic TiN (c-TiN) and hexagonal AlN (h-AlN) composite nanopowders both with varying average crystallite sizes. Second, the sintering temperatures were selected either to preserve initial powder nanocrystallinity (650 °C was lower than both nitridation temperatures) or promote crystal growth and recrystallization (1200 °C was higher than both nitridation temperatures). Potential equilibration towards bimetallic compounds upon solution mixing of the organometallic precursors to nanopowders, monomeric Ti[N(CH3)2]4 and dimeric {Al[N(CH3)2]3}2, was studied with 1H and 13C NMR in C6D6 solution. The powders and nanoceramics, both of the composites and individual nitrides, were characterized if applicable by powder XRD, FT-IR, SEM/EDX, Vicker’s hardness, and helium density. The Vicker’s hardness tests confirmed many of the composite and individual nanoceramics having high hardnesses comparable with those of the reference h-AlN and c-TiN ceramics. This is despite extended phase segregation and, frequently, closed microsized pore formation linked mainly to the AlN component. No evidence was found for metastable alloying of the two crystallographically different nitrides under the applied synthesis and sintering conditions. The high pressure and high temperature sintering of the individual and in situ synthesis-mixed composite nanopowders of TiN-AlN was demonstrated to yield robust nanoceramics.
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
