scholarly journals Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

1997 ◽  
Vol 71 (16) ◽  
pp. 2289-2291 ◽  
Author(s):  
A. T. Sowers ◽  
J. A. Christman ◽  
M. D. Bremser ◽  
B. L. Ward ◽  
R. F. Davis ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride ◽  
Cold Cathode

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

2013 ◽  
Author(s):  
Iskander G. Batyrev ◽  
Chi-Chin Wu ◽  
Peter W. Chung ◽  
N. S. Weingarten ◽  
Kenneth A. Jones
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride

Pulsed laser deposition of aluminum nitride and gallium nitride thin films

1998 ◽  
Vol 127-129 ◽  
pp. 471-476 ◽  
Author(s):  
G.S Sudhir ◽  
H Fujii ◽  
W.S Wong ◽  
C Kisielowski ◽  
N Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

2004 ◽  
Vol 831 ◽  
Author(s):  
Muhammad Maqbool ◽  
H. H. Richardson ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Boron Nitride ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Reactive Sputtering ◽  
Visible Range ◽  
Rf Power

ABSTRACTPraseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

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