Optical and Electrical Properties of n-type Porous Silicon Produced by Electrochemical Etching and Study the Influence of γ-irradiation

2019 ◽  
Vol 11 (5) ◽  
pp. 05025-1-05025-6
Author(s):  
A. A. Sulaiman ◽  
◽  
A. A. K. Muhammed ◽  
M. M. Ivashchenko ◽  
◽  
...  
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Optical And Electrical Properties ◽  
Γ Irradiation

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

The effect of NO2 adsorption on optical and electrical properties of porous silicon layers

2007 ◽  
Vol 41 (8) ◽  
pp. 962-964 ◽  
Author(s):  
V. V. Bolotov ◽  
I. V. Ponomareva ◽  
Yu. A. Sten’kin ◽  
V. E. Kan
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Optical And Electrical Properties ◽  
No2 Adsorption
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