I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

scholarly journals Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

2019 ◽  
Vol 54 (5) ◽  
Author(s):  
Warood Kream Alaarage ◽  
Luma Hafedh Abed Oneiza ◽  
Mohanad Ghulam Murad Alzubaidi
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Ideality Factor ◽  
Thermal Emission ◽  
Electrochemical Etching ◽  
Point Of View ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type

In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

scholarly journals The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

2021 ◽  
Vol 19 (50) ◽  
pp. 77-83
Author(s):  
Ghasaq Ali Tomaa ◽  
Alaa Jabbar Ghazai
Keyword(s):  
Porous Silicon ◽  
Crystal Size ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Homogeneous Pattern

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

scholarly journals Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon

2019 ◽  
Vol 11 (21) ◽  
pp. 102-107
Author(s):  
Uday Muhsin Nayef
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Current Density ◽  
Electrochemical Etching ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Depletion Width ◽  
Cdo Nanoparticles ◽  
P Type

In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties.   Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS. The electrical properties of prepared PS; namely current density-voltage characteristics under dark, show that the pass current through the PS layer is more than that obtained from the CdO/PS/Si which is related to increasing junction resistivity that come from increasing in depletion width.

scholarly journals Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

2018 ◽  
Vol 80 ◽  
pp. 30-39
Author(s):  
Hasan A Hadi
Keyword(s):  
Porous Silicon ◽  
Optical Microscopy ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Diffraction Peak ◽  
Etching Time ◽  
Layer Formation ◽  
Xrd Patterns

In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns show that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.

STUDY OF POROUS SILICON SURFACE PROPERTIES

1996 ◽  
Vol 03 (02) ◽  
pp. 1235-1239
Author(s):  
K. W. CHEAH ◽  
T. Y. LEUNG ◽  
M. H. CHAN ◽  
S. K. SO
Keyword(s):  
Porous Silicon ◽  
Surface States ◽  
Silicon Layer ◽  
Structural Difference ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Free Standing ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force

Porous silicon is a material with a coral-like structure which has a fractal surface. To study these aspects of porous silicon and its relationship with the luminescence property, we have used atomic force microscopy (AFM). Samples were prepared using either pure HF or HF diluted with ethanol. From the results of AFM, distinct structural difference was observed from samples prepared by these two etchants. If we relate the structures to their respective photoluminescence spectra, it appears that finer structure produced shorter wavelength peak photoluminescence. However, the columns of the samples were too large for one to attribute the luminescence to quantum confinement only. Hence, an alternative model may be required to explain the luminescence mechanism. We have also observed that the composition of the etchant can also affect the evolution of the fractal dimension with respect to etching time. Probing of the surfcace electron states was performed using photothermal deflection spectroscopy (PDS). In order to ensure that only porous silicon layer was probed, free-standing films of various porosity were produced for the PDS measurement. The probe energy range was from 0.56 eV to 2.5 eV so that both the bulk states and the surface states were probed. The results showed that there is a clear blueshift of the energy band gap with respect to porosity, and the absorption coefficient decreases with porosity increase at a fixed photon energy. Overtones of hydrides and fluorides of silicon were also observed.

Electrical properties study of porous silicon layer prepared by electrochemical etching

2006 ◽  
Vol 28 (1-2) ◽  
pp. 143-146 ◽  
Author(s):  
Andrzej Korcala ◽  
Wacław Bała ◽  
Artur Bratkowski ◽  
Piotr Borowski ◽  
Zbigniew Łukasiak
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer

STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON: EFFECT OF HF CONCENTRATION

2006 ◽  
Vol 13 (04) ◽  
pp. 351-356 ◽  
Author(s):  
B. NATARAJAN ◽  
V. RAMAKRISHNAN ◽  
V. VASU ◽  
S. RAMAMURTHY
Keyword(s):  
Porous Silicon ◽  
Chemical Species ◽  
Silicon Layer ◽  
Spectral Shift ◽  
Porous Silicon Layer ◽  
Atomic Force ◽  
Prepared Material ◽  
Alloy Effect ◽  
To Come ◽  
P Type

Structural and Photoluminescence (PL) studies are carried out for p-type porous silicon materials prepared with different Hydrogen Fluoride (HF) concentration. Surface morphology of porous silicon was analyzed using atomic force microscope (AFM). Fourier Transform Infra Red (FTIR) spectra indicate that surface of porous silicon contain chemical species like SiH n. PL studies reveal that there is a prominent emission peak around 625 nm. No spectral shift is observed. It is further observed that the emission intensity increases with HF concentration. The PL of the porous silicon layer was found to come from its upper part, which was confirmed by a simulation of the PL spectrum employing an optical model. The refractive indices of the porous silicon layer were also determined through this simulation. The large hydrogen concentration in freshly prepared material has led to the suggestion that a silicon–hydrogen alloy effect is responsible for the luminescence.

scholarly journals Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode

2016 ◽  
Vol 63 ◽  
pp. 67-76 ◽  
Author(s):  
Ahmed N. Abd ◽  
Wasna'a M. Abdulridha ◽  
Mohammed Odda Dawood
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Silicon Photodiode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Evaporation Technique

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.

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