Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

2006 ◽  
Vol 511-512 ◽  
pp. 235-237 ◽  
Author(s):  
M. Hajji ◽  
M. Khardani ◽  
N. Khedher ◽  
H. Rahmouni ◽  
B. Bessaïs ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Porous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Monocrystalline Silicon ◽  
Optical And Electrical Properties ◽  
Silicon Thin Films

Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

Solid-Phase Amorphization in Layered Metal/Silicon thin Films

1987 ◽  
Vol 103 ◽  
Author(s):  
Menachem Nathan
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glassy Phase ◽  
Solid Phase ◽  
General Scheme ◽  
Crystalline Compound ◽  
Nucleation Kinetics ◽  
Silicon Thin Films

ABSTRACTA general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.

Effect of Inert Annealing Gases on Morphology of Gold Nanoparticles Produced by Using Rapid Thermal Annealing

2019 ◽  
Vol 57 ◽  
pp. 7-16
Author(s):  
Tung Thanh Bui ◽  
Tien Minh Huynh ◽  
Thuy Thanh Tieu ◽  
Chien Mau Dang
Keyword(s):  
Gold Nanoparticles ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metallic Nanoparticles ◽  
Strong Influence ◽  
Silicon Substrates ◽  
Optical And Electrical Properties ◽  
Potential Applications ◽  
Spherical Gold Nanoparticles

Metallic nanoparticles have various potential applications. Recent studies have showed that their morphology had a strong influence on their optical and electrical properties. In this work, rapid thermal annealing was used to produce gold nanoparticles on silicon substrates. Morphology control of the gold nanoparticles was made by changing inert annealing gases. Spherical gold nanoparticles were obtained with nitrogen while hemispherical gold nanoparticles were formed with argon.

Effect of thermal annealing on structural, optical and electrical properties of transparent Nb2O5 thin films

2017 ◽  
Vol 13 ◽  
pp. 112-118 ◽  
Author(s):  
A.A. Atta ◽  
M.M. El-Nahass ◽  
A.M. Hassanien ◽  
Khaled M. Elsabawy ◽  
M.M. Abd El-Raheem ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Optical And Electrical Properties
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