Dissolution and Diffusion Behavior of Liquid Co2 into Water Under High Pressure Condition Using Direct Visualization Method for Ccs

2019 ◽  
Author(s):  
Rintaro Fujikawa ◽  
Xiao Ma ◽  
Shuhei Fujimoto ◽  
Akiko Kaneko ◽  
Yutaka Abe
Keyword(s):  
High Pressure ◽  
Visualization Method ◽  
Direct Visualization ◽  
Pressure Condition ◽  
Diffusion Behavior ◽  
Liquid Co2 ◽  
And Diffusion

Phase equilibria and diffusion behavior of high pressure CO 2 in tetra-n-heptyl ammonium bromide

2016 ◽  
Vol 107 ◽  
pp. 370-376 ◽  
Author(s):  
Guifeng Ma ◽  
Yulan Zhou ◽  
Tiezhu Su ◽  
Wenxin Wei ◽  
Yanan Gong ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Equilibria ◽  
Ammonium Bromide ◽  
Diffusion Behavior ◽  
And Diffusion

scholarly journals Study on Dissolution Process of Liquid CO2 into Water under High Pressure Condition for CCS

2017 ◽  
Vol 114 ◽  
pp. 5430-5437 ◽  
Author(s):  
Xiao Ma ◽  
Yutaka Abe ◽  
Akiko Kaneko ◽  
Shuhei Fujimoto ◽  
Chikahisa Murakami
Keyword(s):  
High Pressure ◽  
Dissolution Process ◽  
Pressure Condition ◽  
Liquid Co2

Sorption and diffusion behavior of actinium(iii) ions in contact with hydroxyapatite as a transporter of medical radionuclides

2020 ◽  
Vol 69 (12) ◽  
pp. 2286-2293
Author(s):  
A. V. Severin ◽  
A. N. Vasiliev ◽  
A. V. Gopin ◽  
K. I. Enikeev
Keyword(s):  
Diffusion Behavior ◽  
And Diffusion ◽  
Medical Radionuclides

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Modification of the CO2 surface tension calculation model under low-temperature and high-pressure condition

2016 ◽  
Vol 38 (5) ◽  
pp. 671-676 ◽  
Author(s):  
Wenming Jiang ◽  
Jiang Bian ◽  
Yang Liu ◽  
Song Gao ◽  
Mingcan Chen ◽  
...  
Keyword(s):  
Surface Tension ◽  
High Pressure ◽  
Low Temperature ◽  
Calculation Model ◽  
Pressure Condition

Experimental research of flow rate and diffusion behavior of nature gas leakage underwater

2020 ◽  
Vol 65 ◽  
pp. 104119
Author(s):  
Yixiang Zhang ◽  
Jianlu Zhu ◽  
Youmei Peng ◽  
Jun Pan ◽  
Yuxing Li
Keyword(s):  
Experimental Research ◽  
Flow Rate ◽  
Diffusion Behavior ◽  
Gas Leakage ◽  
Nature Gas ◽  
And Diffusion

scholarly journals One-pot neutron imaging of surface phenomena, swelling and diffusion during methane absorption in ethanol and n-decane under high pressure

PLoS ONE ◽  
2020 ◽  
Vol 15 (9) ◽  
pp. e0238470
Author(s):  
Ondřej Vopička ◽  
Petr Číhal ◽  
Martina Klepić ◽  
Jan Crha ◽  
Vladimír Hynek ◽  
...  
Keyword(s):  
High Pressure ◽  
Neutron Imaging ◽  
Surface Phenomena ◽  
One Pot ◽  
Methane Absorption ◽  
And Diffusion
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