Negative Temperature-Dependence of Stress-Induced R→B19′ Transformation in Nanocrystalline NiTi Alloy

2021 ◽  
Author(s):  
Taotao Wang ◽  
Xiangxiang Rao ◽  
Daqiang Jiang ◽  
Yang Ren ◽  
Lishan Cui ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (69) ◽  
pp. 40437-40444
Author(s):  
Zhenli Yang ◽  
Xiaoxiao Lin ◽  
Jiacheng Zhou ◽  
Mingfeng Hu ◽  
Yanbo Gai ◽  
...  

The negative temperature dependence for the HO2 + n-C3H7O2 reaction in lower temperature regime.


2008 ◽  
Vol 36 (9) ◽  
pp. 573-578
Author(s):  
Hidetsugu YOSHIDA ◽  
Norihiro TAKEUCHI ◽  
Hajime OKADA ◽  
Hisanori FUJITA ◽  
Masahiro NAKATSUKA

1993 ◽  
Vol 8 (8) ◽  
pp. 1875-1885 ◽  
Author(s):  
A.W.P. Fung ◽  
Z.H. Wang ◽  
K. Lu ◽  
M.S. Dresselhaus ◽  
R.W. Pekala

Carbon aerogels are a special class of low-density microcellular foams. These materials are composed of interconnected carbon particles with diameters of approximately 10 nm. The temperature dependence of the dc electrical resistivity and magnetic susceptibility (χ) from 4 K to room temperature, magnetoresistance (MR) in a magnetic field up to 15 T, and Raman scattering were measured as a function of aerogel density. While Raman scattering measurements are not sensitive to variations in density, the χ data show that there are more free carriers in samples of higher density. Aerogel samples with different densities all show a negative temperature coefficient of resistivity and a positive MR. The less dense samples exhibit a stronger temperature dependence of resistivity and a stronger field dependence of the MR, indicating that with decreasing density and increasing porosity, charge carriers are more localized. Data analysis precludes variable-range hopping in favor of nearest-neighbor hopping and fluctuation-induced tunneling as the most likely conduction mechanisms for carbon aerogels.


2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.


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