Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 865-868
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Avalanche Photodiodes ◽  
Positive Temperature Coefficient ◽  
Avalanche Breakdown ◽  
Positive Temperature ◽  
Electrical And Optical Properties ◽  
Positive Angle

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

2000 ◽  
Vol 622 ◽  
Author(s):  
Y. S. Lee ◽  
M. K. Han ◽  
Y. I. Choi
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficient ◽  
Temperature Dependent ◽  
Increasing Temperature ◽  
Temperature Applications

ABSTRACTThe breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

2011 ◽  
Vol 679-680 ◽  
pp. 706-709 ◽  
Author(s):  
Reza Ghandi ◽  
Benedetto Buono ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Surface Passivation ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Positive Temperature ◽  
Large Area ◽  
Dc Current

In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This design provides a stable open-base breakdown voltage of 2.8 kV which is about 75% of the parallel plane breakdown voltage. The small area devices shows a maximum dc current gain of 55 at Ic=0.33 A (JC=825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4 mΩ•cm2. The large area device shows a maximum dc current gain of 52 at Ic = 9.36 A (JC=312 A/cm2) and VCESAT = 1.14 V at Ic = 5 A that corresponds to an ON-resistance of 6.8 mΩ•cm2. Also these devices demonstrate a negative temperature coefficient of the current gain (β=26 at 200°C) and positive temperature coefficient of the ON-resistance (RON = 10.2 mΩ•cm2).

Influence of CF on PTC Properties of LDPE/Carbon Fiber Composites

2014 ◽  
Vol 1056 ◽  
pp. 20-24 ◽  
Author(s):  
Wen Long Zhang ◽  
Yu Ping Wan ◽  
Ya Jie Dai ◽  
Yan Gao ◽  
Chen Wang ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Temperature Coefficient ◽  
Low Cost ◽  
Negative Temperature ◽  
Treatment Method ◽  
Positive Temperature Coefficient ◽  
Carbon Fiber Composites ◽  
Positive Temperature ◽  
Short Lifespan ◽  
Cost Characteristics

PO/CB (Polyolefin/Carbon Black) PTC (Positive Temperature Coefficient) composite with easy processing, low cost characteristics has been applied widely. But it suffered from a relatively short lifespan because of its NTC (Negative Temperature Coefficient) effect and low PTC intensity. In order to overcome this shortcoming, the CF was calcination-treated to prepare LDPE/CF (Low Density Polyethylene/Carbon Fiber) PTC composite. Influence of length, content and treatment method of CF on PTC properties of composites was investigated. Results showed that 0.5mm length CF in composites had higher PTC intensity than that of 2mm length CF. PTC intensity of the composites was enhanced more effectively by calcination treated CF compared to the untreated CF. The maximum PTC intensity was 8.1 when CF’s content was at 8wt%.

Positive Temperature Coefficient of Impact Ionization in Strained-Si

2005 ◽  
Vol 52 (7) ◽  
pp. 1627-1633 ◽  
Author(s):  
N.S. Waldron ◽  
A.J. Pitera ◽  
M. L. Lee ◽  
E.A. Fitzgerald ◽  
J.A. delAlamo
Keyword(s):  
Temperature Coefficient ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Strained Si

scholarly journals Development of Auto Thermal Control Device For Space Air - Conditioning

2021 ◽  
pp. 193-204
Author(s):  
Akinde Olusola Kunle ◽  
Maduako Kingsley Obinna ◽  
Akande, Kunle Akinyinka ◽  
Adeaga Oyetunde Adeoye
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Thermal Control ◽  
Positive Temperature Coefficient ◽  
Control Device ◽  
Thermal Source ◽  
Positive Temperature ◽  
Ntc Thermistor

Auto Thermal Control device is an electronic based device which employs the application of temperature sensors to controlling household appliances without human interference directly. In this work, thermal source is used to regulate electrical fan and room heater depending on ambient temperature. The room heater, which is adjusted to a set temperature, switches ‘ON’ when the temperature of a room is low (cold). While the same is switches ‘OFF’ with increase in the room temperature. This triggers ‘ON’ an electric fan at different speeds, and thus cools the room. A temperature sensor, tthermistor, monitors change in room temperature. Two types of thermistor exists: Positive Temperature Coefficient, PTC. An increasee in the resistance of PTC results in increasee in temperature). In the Negative Temperature Coefficient, NTC; a decreasee in resistance yields to temperature increase. This article explored a NTC thermistor. The design could be a ready product in the market of the developing nation where environmental automation is yet fully deployed.

scholarly journals Temperature Self-Compensated Strain Sensors based on MWCNT-Graphene Hybrid Nanocomposite

2019 ◽  
Vol 3 (4) ◽  
pp. 96 ◽  
Author(s):  
Rajarajan Ramalingame ◽  
Jose Roberto Bautista-Quijano ◽  
Danrlei de Farias Alves ◽  
Olfa Kanoun
Keyword(s):  
Temperature Coefficient ◽  
Carbon Nanomaterials ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Gauge Factor ◽  
Positive Temperature ◽  
Hybrid Nanocomposite ◽  
Resistance Change ◽  
Influence Of Temperature ◽  
Dispersion Quality

Sensors based on carbon nanomaterials are gaining importance due to their tunable properties and their potentially outstanding sensing performance. Despite their advantages, carbon-based nanomaterial sensors are prone to cross-sensitivities with environmental factors like temperature. Thus, to reduce the temperature influence on the sensing material, compensation and correction procedures are usually considered. These methods may require the use of additional sensors which can themselves be subject to residual errors. Hence, a more promising approach consists of synthesizing a material that is capable of self-compensating for the influence of temperature. In this study, a hybrid nanocomposite based on multi-walled carbon nanotubes (MWCNT) and graphene is proposed, which can compensate, by itself, for the influence of temperature on the material conductivity. The hybrid nanocomposite material uses the different temperature behavior of MWCNTs, which have a negative temperature coefficient, and graphene, which has a positive temperature coefficient. The influence of the material ratio and dispersion quality are investigated in this work. Material composition and dispersion quality are analyzed using Raman spectroscopy and scanning electron microscopy (SEM). A composition of 70% graphene and 30% MWCNT exhibits a nearly temperature-independent hybrid nanocomposite with a sensitivity of 0.022 Ω/°C, corresponding to a resistance change of ~1.2 Ω for a temperature range of 25 to 80 °C. Additionally, a simple investigation of the strain sensing behavior of the hybrid material is also presented. The hybrid nanocomposite-based, thin-film strain sensor exhibits good stability over 100 cycles and a significantly high gauge factor, i.e., 16.21.

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET

2017 ◽  
Vol 897 ◽  
pp. 665-668
Author(s):  
Matthaeus Albrecht ◽  
Andreas Huerner ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Solid State ◽  
Temperature Coefficient ◽  
High Voltage ◽  
Circuit Breaker ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Solid State Circuit ◽  
Current Voltage ◽  
Solid State Circuit Breaker

In this work, the feasibility of the Bipolar-Injection Field Effect-Transistor (BIFET) [5] in two different Dual Thyristor type circuits [4] for an application as solid-state circuit breaker (SSCB) is experimentally verified. The Dual Thyristor type circuits are assembled from discrete silicon JFETs and a silicon carbide BIFET and are electrically characterized at various temperatures. The current-voltage characteristic shows the expected regenerative self-triggered turn-off capability under over-currents and the option to control the turn-off current by a passive resistor network. The issue with the adverse positive temperature coefficient of the trigger-current can be solved by putting the SiC BIFET in a cascode arrangement with a silicon Dual Thyristor. In this configuration the SiC BIFET provides the high voltage blocking capability and the silicon Dual Thyristor with its negative temperature coefficient controls the trigger-current. Transient analyses of both circuits indicate fast switching times of less than 50 μs seconds. It is demonstrated for the first time, that the SiC BIFET, due to its normally-on behaviour, used in a Dual Thyristor type circuit is a promising concept for self-triggered fuses in high current and high voltage applications.

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