scholarly journals Organic Thin Film Transistors for Flexible Electronics

Author(s):  
Aenakshi Sircar

Progress in electronics gave rise to the concept of flexible electronics. Which are widely being used for medical and aerospace research. Further development in the fields of flexible electronics unfolded another branch of this electronics system called organic flexible electronics. Organic thin-film transistors, Organic light-emitting diodes are a few of the many forms of organic flexible electronics. Organic materials being used as the substrates increase the flexibility of the electronic circuit. The conductivity of these substrates can be controlled as per requirement by varying the doping concentration of the substrate. The cost of production of organic flexible electronics is low as compared to electronics circuits using a silicon substrate. This paper illustrates the various properties of organic materials and their applications and suitability in flexible electronics.

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.


2019 ◽  
Vol 11 (39) ◽  
pp. 35888-35895 ◽  
Author(s):  
Qizhen Chen ◽  
Yujie Yan ◽  
Xiaomin Wu ◽  
Shuqiong Lan ◽  
Daobing Hu ◽  
...  

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