Tracking of arsenics during the thermal stabilization of an AsH3 scrubber sludge

2013 ◽  
Vol 68 (9) ◽  
pp. 2007-2011 ◽  
Author(s):  
Chang-Yu Liao ◽  
Fang-Chih Chang ◽  
H. Paul Wang ◽  
Yu-Ling Wei ◽  
Chih-Ju G. Jou

Toxic arsenics in an AsH3 scrubber sludge were thermally stabilized in the temperature range of 973–1,373 K. To better understand how the high-temperature treatments can stabilize arsenics in the sludge, their synchrotron X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectra of arsenics were determined. It is found that the reduced arsenic leachability may be associated with the formation of As2O5 (51–59%) and embedded As(V) within the Ca3(PO4)2 matrix (41–49%) in the stabilized sludge. In addition, the As-O bond distances in the stabilized As2O5 are much less than that of normal As2O5 by 0.05–0.07 Å. The shorter As-O bond distances accompanied with the higher bonding energy also have a contribution to the thermal stabilization of arsenics.

Author(s):  
Quek Hsiao Pei ◽  
Shafinaz Shahir ◽  
Liu Tao ◽  
Wan Azlina Ahmad

Several types of microorganisms have been reported to reduce Cr(VI) to the less toxic Cr(III) via enzymatic reactions. The main purpose of this study is to determine the reduction of Cr(VI) by a locally isolated bacterium, Acinetobacter haemolyticus (A. haemolyticus) using the x-ray absorption fine structure (XAFS) spectroscopy. XAFS analysis consisted of both the x-ray absorption near-edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectra. XANES spectra of the rinsed Cr(VI)-laden A. haemolyticus biomass indicated that chromium was only present in the form of Cr (III). The nearest atoms coordinated to Cr(III) were oxygens in an octahedral geometry. The longer Cr-O bond lengths (~1.97 Å) obtained from the EXAFS spectra corroborated the presence of chromium as Cr(III) bonded to oxygen. These findings demonstrate the ability of A. haemolyticus to reduce Cr(VI) to Cr(III) that was bound to oxygen atoms of the ligands in A. haemolyticus.


2015 ◽  
Vol 22 (1) ◽  
pp. 124-129 ◽  
Author(s):  
Weiwei Gu ◽  
Hongxin Wang ◽  
Kun Wang

A series of Ni dithiolene complexes Ni[S2C2(CF3)]2n(n= −2, −1, 0) (1,2,3) and a 1-hexene adduct Ni[S2C2(CF3)2]2(C6H12) (4) have been examined by NiK-edge X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine-structure (EXAFS) spectroscopies. Ni XANES for1–3reveals clear pre-edge features and approximately +0.7 eV shift in the NiK-edge position for `one-electron' oxidation. EXAFS simulation shows that the Ni—S bond distances for1,2and3(2.11–2.16 Å) are within the typical values for square planar complexes and decrease by ∼0.022 Å for each `one-electron' oxidation. The changes in NiK-edge energy positions and Ni—S distances are consistent with the `non-innocent' character of the dithiolene ligand. The Ni—C interactions at ∼3.0 Å are analyzed and the multiple-scattering parameters are also determined, leading to a better simulation for the overall EXAFS spectra. The 1-hexene adduct4presents no pre-edge feature, and its NiK-edge position shifts by −0.8 eV in comparison with its starting dithiolene complex3. Consistently, EXAFS also showed that the Ni—S distances in4elongate by ∼0.046 Å in comparison with3. The evidence confirms that the neutral complex is `reduced' upon addition of olefin, presumably by olefin donating the π-electron density to the LUMO of3as suggested by UV/visible spectroscopy in the literature.


2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.


2000 ◽  
Vol 104 (45) ◽  
pp. 10467-10472 ◽  
Author(s):  
Daniel Spångberg ◽  
Kersti Hermansson ◽  
Patric Lindqvist-Reis ◽  
Farideh Jalilehvand ◽  
Magnus Sandström ◽  
...  

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