scholarly journals Determination of a definition of solar grade silicon. Final report, October 1975--September 1976

1976 ◽  
Author(s):  
M.H. Christ ◽  
K.P. Gupta ◽  
H.W. Gutsche ◽  
D.E. Hill ◽  
W.F. Tucker ◽  
...  

1976 ◽  
Author(s):  
M.H. Christ ◽  
K.P. Gupta ◽  
H.W. Gutsche ◽  
D.E. Hill ◽  
W.F. Tucker ◽  
...  


1983 ◽  
Vol 314 (7) ◽  
pp. 660-664 ◽  
Author(s):  
Pier Luigi Buldini ◽  
Donatella Ferri ◽  
Flavio Zignani


2017 ◽  
Vol 105 (7) ◽  
Author(s):  
Barbara Karches ◽  
Jonas Schön ◽  
Heiko Gerstenberg ◽  
Gabriele Hampel ◽  
Patricia Krenckel ◽  
...  

AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.



1980 ◽  
Author(s):  
D.B. Olson ◽  
W.J. Miller ◽  
R.K. Gould


2008 ◽  
Vol 1123 ◽  
Author(s):  
Karol Putyera ◽  
Kenghsien Su ◽  
Changhsiu Liu ◽  
R. S. Hockett ◽  
Larry Wang

AbstractThe calibration factors are examined for determination of boron (B) and phosphorus (P) in solar grade silicon samples in the new generation of high resolution fast-flow glow-discharge mass spectrometers (FF-GDMS). It is shown that using the generalized calibration factors from the Standard RSF table, the relative errors observed in the determination of these analytes is not acceptably small for photovoltaic applications. The certified B and P values in NIST SRM 57a Si metal sample do not have the confidence intervals, which would be adequate for refining these calibration factors to the acceptable levels. Thus, well-characterized single crystalline Si wafers with known boron and phosphorus contents traceable to NIST reference materials (SRM 2133 and SRM 2137) were used for accurate calibrations and for establishing good analytical procedures for measurements of wide variety of Si sample forms. The obtained results for these important analytes using the new FF-GDMS procedure are compared to other characterization techniques commonly used in this industry.





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