scholarly journals Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

2008 ◽  
Author(s):  
C. Hornsberg ◽  
W. A. Doolittle ◽  
I. Ferguson



1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky


2005 ◽  
Vol 87 (8) ◽  
pp. 083506 ◽  
Author(s):  
Marisol Reyes-Reyes ◽  
Kyungkon Kim ◽  
David L. Carroll


Author(s):  
Chih-Wei Hsu ◽  
Jia-Min Shieh ◽  
Chang-Hong Shen ◽  
Jung Y. Huang ◽  
Hao-Chung Kuo ◽  
...  






MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3391-3402 ◽  
Author(s):  
T.A. Gessert ◽  
E. Colegrove ◽  
B. Stafford ◽  
R. Kodama ◽  
Wei Gao ◽  
...  

ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.



2013 ◽  
Vol 3 (12) ◽  
pp. 1581-1588 ◽  
Author(s):  
Zhengguo Xiao ◽  
Qingfeng Dong ◽  
Pankaj Sharma ◽  
Yongbo Yuan ◽  
Baodong Mao ◽  
...  


2014 ◽  
Vol 22 (S2) ◽  
pp. A376 ◽  
Author(s):  
Wenyan Wang ◽  
Yuying Hao ◽  
Yanxia Cui ◽  
Ximin Tian ◽  
Ye Zhang ◽  
...  




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