scholarly journals Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: December 7, 2005 - June 6, 2008

2010 ◽  
Author(s):  
C. Honsberg ◽  
W. A. Doolittle ◽  
I. Ferguson
Keyword(s):  
High Efficiency ◽  
Material System ◽  
Photovoltaic Devices

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Amorphous Si

High-efficiency photovoltaic devices based on annealed poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1- phenyl-(6,6)C61 blends

2005 ◽  
Vol 87 (8) ◽  
pp. 083506 ◽  
Author(s):  
Marisol Reyes-Reyes ◽  
Kyungkon Kim ◽  
David L. Carroll
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices

Stable and near-omni-directional high-efficiency amorphous Si photovoltaic devices

2011 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Jia-Min Shieh ◽  
Chang-Hong Shen ◽  
Jung Y. Huang ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Amorphous Si

InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

2012 ◽  
Vol 111 (11) ◽  
pp. 114505 ◽  
Author(s):  
Nikholas G. Toledo ◽  
Umesh K. Mishra
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Photovoltaic Devices

Development of Novel Conjugated Donor Polymers for High-Efficiency Bulk-Heterojunction Photovoltaic Devices

2009 ◽  
Vol 42 (11) ◽  
pp. 1709-1718 ◽  
Author(s):  
Junwu Chen ◽  
Yong Cao
Keyword(s):  
High Efficiency ◽  
Bulk Heterojunction ◽  
Photovoltaic Devices

II-VI Material Integration With Silicon for Detector and PV Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3391-3402 ◽  
Author(s):  
T.A. Gessert ◽  
E. Colegrove ◽  
B. Stafford ◽  
R. Kodama ◽  
Wei Gao ◽  
...  
Keyword(s):  
Growth Process ◽  
High Efficiency ◽  
Photovoltaic Devices ◽  
Heteroepitaxial Growth ◽  
Ir Detector ◽  
Ir Detectors ◽  
Growth Environment ◽  
Si Substrates ◽  
Conversion Efficiencies

ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Synthesis and Application of Ferroelectric P(VDF-TrFE) Nanoparticles in Organic Photovoltaic Devices for High Efficiency

2013 ◽  
Vol 3 (12) ◽  
pp. 1581-1588 ◽  
Author(s):  
Zhengguo Xiao ◽  
Qingfeng Dong ◽  
Pankaj Sharma ◽  
Yongbo Yuan ◽  
Baodong Mao ◽  
...  
Keyword(s):  
High Efficiency ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

scholarly journals High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices

2014 ◽  
Vol 22 (S2) ◽  
pp. A376 ◽  
Author(s):  
Wenyan Wang ◽  
Yuying Hao ◽  
Yanxia Cui ◽  
Ximin Tian ◽  
Ye Zhang ◽  
...  
Keyword(s):  
Optical Absorption ◽  
High Efficiency ◽  
Broad Band ◽  
Organic Photovoltaic ◽  
Wide Angle ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

scholarly journals Emergence of Distinct Electronic States in Epitaxially-Fused PbSe Quantum Dot Superlattices

2021 ◽  
Author(s):  
Mahmut Sami Kavrik ◽  
Jordan Hachtel ◽  
Wonhee Ko ◽  
Caroline Qian ◽  
Alex Abelson ◽  
...  
Keyword(s):  
Band Gap ◽  
High Efficiency ◽  
Electronic States ◽  
Scanning Tunneling Spectroscopy ◽  
Band Gap Energy ◽  
Scanning Tunneling ◽  
Material System ◽  
High Efficiency Solar Cells ◽  
Electron Energy Loss ◽  
Band Gap Modulation

Abstract Quantum coupling in arrayed nanostructures may induce novel mesoscale properties such as electronic minibands that may lead to applications including high efficiency solar cells. Colloidal PbSe quantum dots (QDs) can self-assemble into epitaxially-fused superlattices (epi-SLs), making them a promising material system to study collective phenomena. In the present study, the presence of distinct local electronic states induced by crystalline necks connecting individual PbSe QDs is documented by several techniques that leads to modulation of the band gap energy across the epi-SL. The energy band gap measured by multi-probe scanning tunneling spectroscopy (STS) shows variation from 0.7 eV at the center of the QDs to 1.1 eV at their necks. Complementary monochromated electron energy-loss spectroscopy (EELS) measurements reveal the presence of distinct electronic states from necks in the epi-SL, confirming the STS measurements and demonstrating band gap modulation in spectral mapping. It is hypothesized that these new electronic states are induced by quantum confinement of carriers in the necks between the QDs, redefining the energy landscape of the PbSe QD epi-SL.

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