scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation

Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method

1993 ◽  
Vol 73 (7) ◽  
pp. 3271-3275 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Ion Doping ◽  
Impurity Doping ◽  
Excimer Laser Irradiation

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Laser induced implanted oxide (Ll2Ox) and polycrystalline silicon film simultaneously fabricated by excimer laser irradiation

1997 ◽  
Vol 70 (3) ◽  
pp. 372-374
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Jae-Hong Jun ◽  
Hong-Seok Choi ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Excimer Laser Irradiation ◽  
Polycrystalline Silicon Film

Improvement of green cathodoluminescence of zinc oxide stacked films prepared by high-power excimer laser irradiation of sol–gel-derived precursors

2010 ◽  
Vol 518 (14) ◽  
pp. 3875-3878 ◽  
Author(s):  
T. Nagase ◽  
H. Kominami ◽  
Y. Nakanishi ◽  
K. Shinozaki ◽  
N. Mizutani
Keyword(s):  
Zinc Oxide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Sol Gel ◽  
Excimer Laser Irradiation

Photo-Chemical Pattern Etching of Silicon-Carbide by Using Excimer Laser and Hydrogen Peroxide Solution

2002 ◽  
Vol 742 ◽  
Author(s):  
D. Sasaki ◽  
M. Murahara
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Chemical Stability ◽  
High Resistance ◽  
Water Solution ◽  
Mixed Solution ◽  
Etching Depth ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

A circuit pattern etching of a Silicon-carbide (SiC) surface was conducted with KrF excimer laser irradiation in the presence of HF and H2O2 mixed solutions. SiC have excellent properties of a high hardness, high melting point, wide band gap, high resistance to radiation and chemical stability. This material has come to attract attention as an integrated circuit material for high resistance to environment. However, the material is very difficult in minute processing by the photo-lithography because of its chemical stability. Thus, we developed the new etching method in which a SiC surface was photo-oxidized with H2O or H2O2 by using excimer laser irradiation and was etched by HF water solution. In this experiment, the mixed solution was poured into the thin gap between an Al2O3 glass and the SiC surface with capillary phenomenon. A patterned excimer laser light was, then, irradiated on the SiC surface. The H2O or H2O2 in the reaction solution was photo-dissociated, and the photo-dissociated active oxygen reacted with the SiC. CO2 and SiO2 were formed only on the part exposed by the pattered light forcibly, and an oxidized layer was formed. In this chemical reaction, the CO2 evaporated, and the SiO2 remained on the sample surface. The SiO2 layer was then dissolved by the HF water solution. Thus, etching was conducted by the repetition of the forced oxidization of the SiC and the dissolving of the oxidized layer. In this experiment, the most effective conditions were 20% of H2O2 water solution, 15% HF water solution and 256mJ/cm2 of KrF excimer laser. The etching depth was 80 Å at the laser shot number of 10000. It significantly improved compared with that of using an ArF excimer laser (256mJ/cm2, 193nm), 50 Å.

A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6624-6628 ◽  
Author(s):  
Akito Hara ◽  
Kuninori Kitahara ◽  
Kazuo Nakajima ◽  
Masahiro Okabe
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
New Approach ◽  
Wide Range ◽  
Excimer Laser Irradiation
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