scholarly journals Speckle Reduction Techniques in Semiconductor Lasers

2014 ◽  
Vol 42 (7) ◽  
pp. 551
Author(s):  
Hiroshi MURATA ◽  
Yasuyuki OKAMURA ◽  
Kazuhisa YAMAMOTO
2017 ◽  
Author(s):  
Robert Furstenberg ◽  
Christopher A. Kendziora ◽  
Christopher J. Breshike ◽  
Viet Nguyen ◽  
R. Andrew McGill

Author(s):  
Muhammad Ali Shoaib ◽  
Md Belayet Hossain ◽  
Yan Chai Hum ◽  
Joon Huang Chuah ◽  
Maheza Irna Mohd Salim ◽  
...  

Background: Ultrasound (US) imaging can be a convenient and reliable substitute for magnetic resonance imaging in the investigation or screening of articular cartilage injury. However, US images suffer from two main impediments, i.e., low contrast ratio and presence of speckle noise. Aims: A variation of anisotropic diffusion is proposed that can reduce speckle noise without compromising the image quality of the edges and other important details. Methods: For this technique, four gradient thresholds were adopted instead of one. A new diffusivity function that preserves the edge of the resultant image is also proposed. To automatically terminate the iterative procedures, the Mean Absolute Error as its stopping criterion was implemented. Results: Numerical results obtained by simulations unanimously indicate that the proposed method outperforms conventional speckle reduction techniques. Nevertheless, this preliminary study has been conducted based on a small number of asymptomatic subjects. Conclusion: Future work must investigate the feasibility of this method in a large cohort and its clinical validity through testing subjects with a symptomatic cartilage injury.


2014 ◽  
Vol 4 (1) ◽  
pp. 32-40 ◽  
Author(s):  
Jihoon Park ◽  
Jin Bum Kang ◽  
Jin Ho Chang ◽  
Yangmo Yoo

2002 ◽  
Vol 12 (01) ◽  
pp. 177-205 ◽  
Author(s):  
Nikolai N. Ledentsov ◽  
Victor M. Ustinov ◽  
Dieter Bimberg ◽  
James A. Lott ◽  
Zh. I. Alferov

Quantum Dots (QD) provide unique opportunities to extend all the basic properties of heterostructure lasers and move further their applications. Practical fabrication of QD lasers became possible when techniques for self-organized growth allowed fabrication of dense and uniform arrays of narrow-gap nanodomains, coherently inserted in a semiconductor crystal matrix. Using of InAs QD lasers enabled significant improvement of device performance and extension of the spectral range on GaAs substrates to mainstream telecom wavelengths. Continuous wave 1.3 μm room-temperature output power of ~300 mW single mode for edge-emitters and of 1.2 mW multimode for vertical-cavity surface-emitting lasers are realized. Long operation lifetimes are manifested. The breakthrough become possible both due to development of self-organized growth and defect-reduction techniques in QD technology.


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