Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy

Semiconductors ◽

10.1134/s1063782619070224 ◽

2019 ◽

Vol 53 (7) ◽

pp. 993-999 ◽

Cited By ~ 1

Author(s):

P. V. Seredin ◽

A. S. Lenshin ◽

D. S. Zolotukhin ◽

D. L. Goloshchapov ◽

A. M. Mizerov ◽

...

Keyword(s):

Optical Properties ◽

Electronic Structure ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

Nanoporous Silicon ◽

Atomic And Electronic Structure

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Electronic structure and optical properties of ultrathin CdS/ZnS quantum wells grown by molecular-beam epitaxy

Physical Review B ◽

10.1103/physrevb.59.10268 ◽

1999 ◽

Vol 59 (15) ◽

pp. 10268-10275 ◽

Cited By ~ 19

Author(s):

M. Hetterich ◽

Ch. Märkle ◽

A. Dinger ◽

M. Grün ◽

C. Klingshirn

Keyword(s):

Optical Properties ◽

Electronic Structure ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam

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Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

Acta Physica Polonica A ◽

10.12693/aphyspola.90.789 ◽

1996 ◽

Vol 90 (4) ◽

pp. 789-792

Author(s):

M. Godlewski ◽

J.P. Bergman ◽

B. Monemar ◽

U. Rossner ◽

A. Barski

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

Gas Source ◽

Aln Buffer

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The Investigation of Porous AlXGa1-XN Layers on Si (111) Substrate with GaN/AlN as Buffer Layer

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.364.164 ◽

2011 ◽

Vol 364 ◽

pp. 164-168

Author(s):

Yushamdan Yusof ◽

Mohd Zaki Mohd Yusoff ◽

Mahmood Ainorkhilah ◽

Hassan Zainuriah ◽

Abu Hassan Haslan ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

Lattice Mismatch ◽

Electrochemical Etching ◽

High Quality ◽

Pl Spectra ◽

Anisotropic Structures ◽

Uv Lamp

High quality undoped AlxGa1-xN with high Ga composition was grown on Si (111) substrate, using GaN/AlN as the buffer layer, by plasma-assisted molecular beam epitaxy (PAMBE). The present work reports on the photoluminescence (PL) studies of porous AlxGa1-xN prepared by ultraviolet (UV) assisted electrochemical etching in a solution of 2 % concentration of KOH electrolyte under illumination of an UV lamp with 500 W power for 30 min. The optical properties of porous AlxGa1-xN sample was compared to the corresponding as-grown GaN. PL studies suggested that the porosity was capable of improving the lattice mismatch induced strain. Porosity induced PL intensity enhancement was found in nanoporous sample. The resulting nanoporous AlxGa1-xN display red-shifted PL spectra compared to the as-grown AlxGa1-xN. Appearance of the red-shifted emission is correlated with the development of highly anisotropic structures in the morphology.

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