nanoporous si
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Author(s):  
Valerij Yerokhov ◽  
Anatoly Druzhinin ◽  
Stepan Nichkalo ◽  
Nazar Shtangret


2021 ◽  
Author(s):  
Fabian Medina ◽  
Sien Wang ◽  
Qing Hao


2021 ◽  
pp. 107100
Author(s):  
Ryota Okuno ◽  
Mari Yamamoto ◽  
Atsutaka Kato ◽  
Masanari Takahashi


2020 ◽  
Vol MA2020-02 (68) ◽  
pp. 3501-3501
Author(s):  
Ryota Okuno ◽  
Mari Yamamoto ◽  
Atsutaka Kato ◽  
Masanari Takahashi


2020 ◽  
Vol 102 (20) ◽  
Author(s):  
Laura de Sousa Oliveira ◽  
S. Aria Hosseini ◽  
Alex Greaney ◽  
Neophytos Neophytou


2020 ◽  
Vol 167 (14) ◽  
pp. 140522
Author(s):  
Ryota Okuno ◽  
Mari Yamamoto ◽  
Atsutaka Kato ◽  
Masanari Takahashi


Author(s):  
Dmitry Zolotukhin ◽  
Dmitry Goloshchapov ◽  
Pavel Seredin ◽  
Andrey Mizerov ◽  
Alexander Lenshin

In this work, we demonstrate a new approach to the formation of GaN layers on Si (111) substrates using a transition nanoporous Si (111) (por-Si) sublayer, which was subsequently modified using the adatom substitution technique in order to form a 3H-buffer layer. SiC.



2020 ◽  
Vol 46 (6) ◽  
pp. 532-535
Author(s):  
A. A. Sycheva ◽  
E. N. Voronina


Author(s):  
А.А. Сычева ◽  
Е.Н. Воронина

In this paper molecular dynamics simulations of low-energy (50–200 eV) ion irradiation of nanoporous Si/SiO2-based materials were performed. Obtained results confirm the experimentally observed the densification of the uppermost surface layers of materials with small (less than 1.5 nm) pores due to pore collapse initiated by incident ions. Special features of the irradiation of nanoporous materials with He and Ar low-energy ions and the influence of their energy on structural changes of materials under study are discussed.



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