scholarly journals О фазовом разделении в слоях (Ga,Mn)As, полученных ионной имплантацией и последующим лазерным отжигом

2019 ◽  
Vol 61 (3) ◽  
pp. 465
Author(s):  
Е.А. Ганьшина ◽  
Л.Л. Голик ◽  
З.Э. Кунькова ◽  
Г.С. Зыков ◽  
Ю.В. Маркин ◽  
...  
Keyword(s):  
Kerr Effect ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Measurement Range ◽  
Optical Transitions ◽  
Magnetic Inhomogeneity ◽  
Pulsed Laser Annealing ◽  
Temperature Dependences ◽  
Semiconductor Matrix ◽  
Electron Phase Separation

AbstractIn this paper, we present the results of studies of the spectral, temperature, and field dependences of the transversal Kerr effect in Ga_1 – _ x Mn_ x As ( x = 0.0066–0.033) layers produced by ion implantation and subsequent pulsed laser annealing. The complicated nonmonotonous nature of the temperature dependences of the transversal Kerr effect and its dependence on the measurement range indicate a magnetic inhomogeneity of the layers. The reasons for the inhomogeneity can be the Gaussian distribution of Mn over the thickness of the layers and the electron phase separation in them. The appearance of new features in the spectra of the transversal Kerr effect is explained by the presence in the doped semiconductor matrix of nanoregions with a higher carrier concentration and a higher Curie temperature and a shift of the Fermi level into the valence band leading to an increase in the energy of optical transitions.

Transversal Kerr effect of In1−xMnxAs layers prepared by ion implantation followed by pulsed laser annealing

2016 ◽  
Vol 55 (7S3) ◽  
pp. 07MF02 ◽  
Author(s):  
Elena Gan’shina ◽  
Leonard Golik ◽  
Zoya Kun’kova ◽  
Igor Bykov ◽  
Andrey Novikov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Kerr Effect ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Experimental Study and Simulation of the Structure-Phase Transitions in Deposited Ge Layers during Pulsed Laser Annealing

2016 ◽  
Vol 247 ◽  
pp. 24-29 ◽  
Author(s):  
Herman A. Novikov ◽  
Rustem M. Bayazitov ◽  
Rafael M. Batalov ◽  
Ildar A. Faizrakhmanov ◽  
Gennadii D. Ivlev ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Laser Annealing ◽  
Radiation Power ◽  
Ion Beam ◽  
Thermal Contact ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Temperature Dependences ◽  
Optical Probing

Ion-beam deposition of amorphous Ge layers on different substrates (silicon and quartz) has been performed. Deposited amorphous Ge layers were subjected to pulsed laser annealing (λ = 0.69 μm, τ = 80 ns). Simultaneously the optical probing of the Ge surface was carried out. The computer simulation of heating processes and phase transitions was performed taking into account the temperature dependences of film and substrates’ parameters and phase transition energies. The results of the dynamics of heating, melting, crystallization and plasma formation processes are well described by simulation data. It is shown that the threshold values for radiation power density and phase transition rates are determined mainly by thermophysical parameters of the substrates and thermal contact between Ge melt and substrate.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal

2001 ◽  
Vol 328 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
D. Klinger ◽  
M. Lefeld-Sosnowska ◽  
J. Auleytner ◽  
D. Żymierska ◽  
L. Nowicki ◽  
...  
Keyword(s):  
Defect Structure ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Extended Defect ◽  
Pulsed Laser Annealing

Superconducting V3Si produced by pulsed laser annealing

1982 ◽  
Vol 41 (4) ◽  
pp. 321-324 ◽  
Author(s):  
B. Stritzker ◽  
B.R. Appleton ◽  
C.W. White ◽  
S.S. Lau
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Sign in / Sign up

Export Citation Format

Share Document