scholarly journals Вариация состояния поверхности в ходе сканирования в низковольтном РЭМ и ее влияние на размеры рельефной структуры

2020 ◽  
Vol 62 (6) ◽  
pp. 947
Author(s):  
Ю.В. Ларионов ◽  
Ю.В. Озерин

The emission variation of SSE from surface fragments of protrusions in a silicon plate is evaluated during prolonged scanning in low energy SEM. Emission dynamic variation that is especially complex near the edges of protrusion upper bases and slopes is discovered that affects the sizes of all protrusion fragments. Emission variation is explained with changes of unevenly localized charge state at different surface fragments of protrusions in a natural silica and a contamination film. Contamination is occurred in vacuum and depends on a surface charge state so it is not uniform along protrusion surface. The total absence of contamination on some protrusions is fixed so its initial linewidth size is occurred a constant during a scanning. The limiting uprising of a linewidth size to 4.5 at a one case and the limiting decrease to -0.8 at another case are fixed. Yu. V. Larionov, Senior Researcher, A.M. Prokhorov General Physics Institute, RAS, Moscow, 119991, Russian Federation, E-mail: [email protected], Yu. V. Ozerin, Leading Engineer, [email protected] Mikron Co., Zelenograd, Russia

1983 ◽  
Vol 38 (9) ◽  
pp. 959-962
Author(s):  
A. A. Berezin

Abstract A system of polyvalent impurity centers in a semiconductor (i.e. Au-centers in Si) is con-sidered. The ground state of the impurity pair Au-(a) + Au° (b), where an extra electron is localized on the site a, may be turned into an excited state due to a change of the charge state of a third nearby impurity site. This happens because of different shifts of the Au--level at sites a and b due to their different distances from the third center. As a result, the original pair is able to reach a new ground state Au° (a) + Au- (b) through a slow spontaneous tunnel transition. The probability of this transition, when it is accompanied by an emission of a low energy photon, is calculated explicitly.


1995 ◽  
Vol 396 ◽  
Author(s):  
F.B. Abdulkasimov ◽  
V.Kh. Ferleger

AbstractA procedure of deflection of backscattered neutral atoms with low energy E° = (250÷3000) eV based on neutral ionization by electron impact has been developed. The ionization degrees η+of Ar atoms single scattered at the angle θ=138° from V and VI period metal polycrystal surfaces as well inelastic energy losses Q have been measured. It has been found that both η+ and Q changed nonmonotonically within each period. It has been shown that for the elements of the same group under otherwise equal conditions η+ at the scattering from V period elements appeared to be always higher than those for the VI period. It has been established that at scattering from MoRe alloy surface η+ in peaks of single scattering from Mo and Re the metal target values coincided with corresponding values measured for pure Mo and Re metal targets. Using the results obtained one could draw some conclusions about the dependence of the charge state on the target structure.


2005 ◽  
Vol 36 (10) ◽  
pp. 1767-1771
Author(s):  
E. Sagawa ◽  
Shigeaki Watanabe ◽  
Shigeto Watanabe

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