Резонансные ступени тока в джозефсоновских структурах с прослойкой из материала, обладающего сильным спин-орбитальным взаимодействием

We report on results of experimental study of mesa heterostructures Nb/Au/Sr2IrO4/YBa2Cu3Ox with the barrier layer of Sr2IrO4, a material known as Mott antiferromagnetic insulator with high spin-orbit interaction energy, ESO ~ 0.4 eV. Under the influence of magnetic field H<15 Oe the resonant steps were registered at voltages Vn  1/L, inversely proportional to the width of the structures L. In contrast to the equidistant Fiske steps, changing the polarity of biasing current I, an asymmetry in Vn has been observed with a difference of voltage spacing between the steps. A change of applied magnetic field H has no effect of the voltages positions Vn , but the amplitudes of steps oscillate. Under microwave irradiation the Shapiro steps were observed demonstrating an oscillating behavior with power of applied microwaves.

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Negative Magnetoresistance Generated by Combination of Spin–Orbit Interaction and Applied Magnetic Field

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.023001 ◽

2012 ◽

Vol 51 ◽

pp. 023001 ◽

Cited By ~ 2

Author(s):

Masamichi Sakai ◽

Daisuke Kodama ◽

Takahito Sakuraba ◽

Zentaro Honda ◽

Shigehiko Hasegawa ◽

...

Keyword(s):

Magnetic Field ◽

Applied Magnetic Field ◽

Orbit Interaction ◽

Negative Magnetoresistance ◽

Spin Orbit ◽

Spin Orbit Interaction

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Negative Magnetoresistance Generated by Combination of Spin–Orbit Interaction and Applied Magnetic Field

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.023001 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 023001 ◽

Cited By ~ 1

Author(s):

Masamichi Sakai ◽

Daisuke Kodama ◽

Takahito Sakuraba ◽

Zentaro Honda ◽

Shigehiko Hasegawa ◽

...

Keyword(s):

Magnetic Field ◽

Applied Magnetic Field ◽

Orbit Interaction ◽

Negative Magnetoresistance ◽

Spin Orbit ◽

Spin Orbit Interaction

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Magnetoresistance Generated by Combination of Spin–Orbit Interaction and Applied Magnetic Field in Bipolar Conductors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.093001 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 093001 ◽

Cited By ~ 7

Author(s):

Masamichi Sakai ◽

Daisuke Kodama ◽

Yoshihisa Okano ◽

Takahito Sakuraba ◽

Zentaro Honda ◽

...

Keyword(s):

Magnetic Field ◽

Applied Magnetic Field ◽

Orbit Interaction ◽

Spin Orbit ◽

Spin Orbit Interaction

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Spin generation and manipulation based on spin-orbit interaction in semiconductors

10.1093/oso/9780198787075.003.0013 ◽

2017 ◽

Author(s):

J. Nitta

Keyword(s):

Magnetic Field ◽

Orbit Interaction ◽

Degree Of Freedom ◽

Effective Magnetic Field ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Spin Degree ◽

Dimensional Electron Gas ◽

Spin Orbit Interactions ◽

Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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