scholarly journals Дизайн и новая функциональность антиволноводных вертикально-излучающих лазеров на длину волны 850 nm

2018 ◽  
Vol 44 (1) ◽  
pp. 85
Author(s):  
Н.Н. Леденцов ◽  
В.А. Щукин ◽  
V.P. Kalosha ◽  
N.N. Ledentsov, Jr. ◽  
J.R. Kropp ◽  
...  
Keyword(s):  
Optical Power ◽  
Temperature Shift ◽  
Single Mode ◽  
Bragg Reflector ◽  
Laser Generation ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter ◽  
Single Mode Laser ◽  
Emitting Lasers

AbstractVertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum γ factor (λ/2 design) and suppression of optical power beyond the aperture. A VCSEL with two coupled cavities provides additional sharp growth of the loss of high-order lateral modes by leakage to the oxidized region and provides single-mode laser generation for an aperture diameter of up to 5 μm. Single-mode antiwaveguiding VCSELs provide ultrafast data transmission with a rate of up to 160 Gbit/s. The structure in which the active medium is placed in the lower distributed Bragg reflector and the cavity and the upper distributed Bragg reflector are dielectric, reducing the temperature shift of the radiation wavelength by a factor of 2 (to ∼0.03 nm/K).

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Lithographic in-mold patterning for CsPbBr3 nanocrystals distributed Bragg reflector single-mode laser

Nanoscale ◽  
2021 ◽  
Vol 13 (37) ◽  
pp. 15830-15836
Author(s):  
Ahmad Syazwan Ahmad Kamal ◽  
Cheng-Chieh Lin ◽  
Di Xing ◽  
Yang-Chun Lee ◽  
Zhiyu Wang ◽  
...  
Keyword(s):  
Single Mode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Mode Laser ◽  
Perovskite Nanocrystals ◽  
Single Mode Laser ◽  
Gain Material ◽  
On Chip

A newly developed lithographic in-mold patterning process is proposed to fabricate on-chip single-mode distributed-Bragg-reflector waveguide small lasers that utilized CsPbBr3 perovskite nanocrystals as the gain material.

Optical Power Optimization of the Single Mode Vertical Cavity Surface Emitting Lasers by Two Oxide Layers

2011 ◽  
Vol 383-390 ◽  
pp. 6283-6288 ◽  
Author(s):  
Mohamad Yazdanypoor ◽  
Asghar Gholami
Keyword(s):  
Output Power ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Oxide Layers ◽  
High Frequency Response ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Influence of using two oxide layers in the both sides of active layer with different position and aperture size on Vertical Cavity Surface Emitting Laser (VCSEL) performance is analyzed showing effects on the output power, single mode operation and threshold current. In addition, for improving speed we use ion implant area along with thick oxide layer to minimize parasitic elements. As the result, the proposed design exhibits much better stability of the fundamental mode over a wider current range, much higher output power, lower threshold current, than the conventional one with a high frequency response.

scholarly journals Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019 ◽  
Vol 9 (8) ◽  
pp. 1593 ◽  
Author(s):  
Cheng Zhang ◽  
Rami ElAfandy ◽  
Jung Han
Keyword(s):  
Bragg Reflector ◽  
Epitaxial Lateral Overgrowth ◽  
Current Status ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Trade Offs ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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