scholarly journals Асимметрия дефектной структуры полуполярного GaN, выращенного на Si(001)

2018 ◽  
Vol 44 (20) ◽  
pp. 53
Author(s):  
А.Е. Калмыков ◽  
А.В. Мясоедов ◽  
Л.М. Сорокин
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Nitride ◽  
Epitaxial Layer ◽  
Vapor Phase ◽  
Defect Structure ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Transmission Electron

AbstractThe defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.

Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy

1983 ◽  
Vol 54 (6) ◽  
pp. 3554-3560 ◽  
Author(s):  
B. A. Vojak ◽  
J. P. Salerno ◽  
D. C. Flanders ◽  
G. D. Alley ◽  
C. O. Bozler ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Transmission Electron

Defects at the Interface of GaAsxP1−x/Gap Grown by Vapor Phase Epitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Seiji Takeda ◽  
M. Hirata ◽  
H. Fujita ◽  
T. Sato ◽  
K. Fujii
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Interface Region ◽  
Compositional Variation ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Epitaxial Crystal Growth

ABSTRACTDefects and microstructures in a ternary GaAsxP−x compound have been studied by transmission electron microscopy. The compound was grown on a (100) GaP substrate by vapor phase epitaxial. Crystal growth striation contrast was detected in a TEM image. This contrast was explained by local compositional variation of As and P. The distribution of misfit dislocations in the interface region was also studied.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

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