Аномалии в фотовольтаических характеристиках многопереходных солнечных элементов при сверхвысоких концентрациях солнечного излучения

An anomaly arising in photovoltaic characteristics at ultra-high concentrations (more than 2000 suns) in triple-junction GaInP/GaAs/Ge and in the double-junction GaInP/GaAs solar cells has been studied. The light IV-curves at different sun concentrations and dependence of open circuit voltage on photogenerated current have been analyzed. It is shown that the anomaly is caused by the photovoltaic effect source, counteracting the subcells. The reason for this effect – absorption of photons intended for GaAs subcell in the tunnel diode located between GaInP and GaAs sub-cells.

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A high efficiency solution processed polymer inverted triple-junction solar cell exhibiting a power conversion efficiency of 11.83%

Energy & Environmental Science ◽

10.1039/c4ee03048f ◽

2015 ◽

Vol 8 (1) ◽

pp. 303-316 ◽

Cited By ~ 329

Author(s):

Abd. Rashid bin Mohd Yusoff ◽

Dongcheon Kim ◽

Hyeong Pil Kim ◽

Fabio Kurt Shneider ◽

Wilson Jose da Silva ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Power Conversion Efficiency ◽

Conversion Efficiency ◽

Triple Junction ◽

High Efficiency ◽

Open Circuit Voltage ◽

Power Conversion ◽

Open Circuit ◽

Tandem Solar Cells

We propose that 1 + 1 + 1 triple-junction solar cells can provide an increased efficiency, as well as a higher open circuit voltage, compared to tandem solar cells.

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11.0% Stable Efficiency on Large Area, Encapsulated a-Si:H and a-SiGe:H based Multijunction Solar Cells Using HF Technology

MRS Proceedings ◽

10.1557/opl.2011.815 ◽

2011 ◽

Vol 1321 ◽

Cited By ~ 1

Author(s):

A. Banerjee ◽

D. Beglau ◽

T. Su ◽

G. Pietka ◽

G. Yue ◽

...

Keyword(s):

Solar Cells ◽

Triple Junction ◽

Gas Flow ◽

High Efficiency ◽

Open Circuit ◽

Large Area ◽

Multijunction Solar Cells ◽

Double Junction ◽

Junction Structure ◽

Cell Thickness

ABSTRACTWe report on the investigation of large area a-Si:H/a-SiGe:H double-junction and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells prepared by our proprietary High Frequency (HF) glow discharge technique. For investigative purposes, we initially used the simpler double-junction structure. We studied the effect of: (1) Ge content, (2) cell thickness, and (3) SiH4 and GeH4 gas flow on the light-induced degradation of the solar cells. Our results show that the double-junction cells with different Ge concentration have open-circuit voltage (Voc) in the range of 1.62-1.75 V. Voc exhibits a flat plateau in the range of 1.65-1.72 V for both initial and stabilized states. The light-induced degradation for cells in this range of Voc is insensitive to the Ge content. In terms of thickness dependence of the intrinsic layers, we found that the initial efficiency increases with cell thickness in the thickness range 2000-4000 Å. However, light-induced degradation increases with increasing thickness. Consequently, the stabilized efficiency is invariant with cell thickness in the thickness range studied. The results of SiH4 and GeH4 gas flow on cell characteristics demonstrate that the deposition rate decreases by only 20% when the active gas flow is reduced to 0.25 times standard flow. The initial and stabilized efficiencies are similar. The information gleaned from the study was used to fabricate high efficiency, large area (~464 cm2) double- and triple-junction solar cells. The highest stable efficiency, as measured by NREL, was 9.8% and 11.0% for the double- and triple-junction structures, respectively.

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Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

International Journal of Photoenergy ◽

10.1155/2012/946024 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Peyman Jelodarian ◽

Abdolnabi Kosarian

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Current Density ◽

Doping Concentration ◽

Open Circuit Voltage ◽

Open Circuit ◽

Maximum Efficiency ◽

Junction Solar Cell ◽

Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

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Amorphous Silicon Alloy Solar Cells Near the Threshold of Amorphous-to-Microcrystalline Transition

MRS Proceedings ◽

10.1557/proc-609-a15.4 ◽

2000 ◽

Vol 609 ◽

Cited By ~ 23

Author(s):

Jeffrey Yang ◽

Kenneth Lord ◽

Subhendu Guha ◽

S.R. Ovshinsky

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

High Efficiency ◽

Open Circuit Voltage ◽

Open Circuit ◽

Area Efficiency ◽

Junction Device ◽

Tandem Structure ◽

Double Junction ◽

Junction Structure

ABSTRACTA systematic study has been made of amorphous silicon (a-Si) alloy solar cells using various hydrogen dilutions during the growth of the intrinsic (i) layer. We find that the open-circuit voltage (Voc) of the cells increases as the dilution increases; it then reaches a maximum before it decreases dramatically. This sudden drop in Voc is attributed to the transition from amorphous silicon to microcrystalline inclusions in the i layer. We study i-layer thicknesses ranging from 1000 Å to 5000 Å and find that the transition occurs in all thicknesses investigated. Based on this study, a-Si alloy p i n solar cells suitable for use in the top cell of a high efficiency triple-junction structure are made. By selecting an appropriate dilution, cells with Voc greater than 1 V can be achieved readily. Solar cells made near the threshold not only exhibit higher initial characteristics but also better stability against light soaking. We have compared top cells made near the threshold with our previous best data, and found that both the initial and stable efficiencies are superior for the near-threshold cells. For an a-Si/a-Si double-junction device, a Voc value exceeding 2 V has been obtained using thin component cells. Thicker component cells give rise to an initial active-area efficiency of 11.9% for this tandem structure.

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Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

Journal of Nanomaterials ◽

10.1155/2014/410717 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6 ◽

Cited By ~ 1

Author(s):

Hwen-Fen Hong ◽

Tsung-Shiew Huang ◽

Wu-Yih Uen ◽

Yen-Yeh Chen

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Conversion Efficiency ◽

Triple Junction ◽

Fill Factor ◽

Open Circuit Voltage ◽

Short Circuit ◽

Short Circuit Current ◽

Energy Conversion Efficiency ◽

Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

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Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography

Journal of Nanomaterials ◽

10.1155/2016/9245159 ◽

2016 ◽

Vol 2016 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Shigeru Yamada ◽

Shinsuke Miyajima ◽

Makoto Konagai

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Open Circuit Voltage ◽

Light Trapping ◽

Photovoltaic Effect ◽

Open Circuit ◽

Limiting Factors ◽

Solar Cell Performance ◽

Cell Structures ◽

Silicon Silicon

A fabrication process for silicon/silicon dioxide (Si/SiO2) superlattice microwire array solar cells was developed. The Si/SiO2 superlattice microwire array was fabricated using a microsphere lithography process with polystyrene particles. The solar cell shows a photovoltaic effect and an open-circuit voltage of 128 mV was obtained. The limiting factors of the solar cell performance were investigated from the careful observations of the solar cell structures. We also investigated the influence of the microwire array structure on light trapping in the solar cells.

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Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage

Nanoscale ◽

10.1039/c4nr01040j ◽

2014 ◽

Vol 6 (12) ◽

pp. 7093 ◽

Cited By ~ 28

Author(s):

Swaminathan Venkatesan ◽

Evan C. Ngo ◽

Qiliang Chen ◽

Ashish Dubey ◽

Lal Mohammad ◽

...

Keyword(s):

Solar Cells ◽

Open Circuit Voltage ◽

Open Circuit ◽

Double Junction

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Microcrystalline (Si,Ge):H Solar Cells

MRS Proceedings ◽

10.1557/proc-762-a7.6 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Jianhua Zhu ◽

Vikram L. Dalal

Keyword(s):

Solar Cells ◽

Buffer Layer ◽

Quantum Efficiency ◽

Fill Factor ◽

Open Circuit Voltage ◽

Defect Density ◽

Cell Structure ◽

Open Circuit ◽

Base Layer ◽

Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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