ZNO Thin Film Prepared By Dip Coating Technique for Gas Sensing Application

Author(s):  
Sounder. J. P.
ChemPhotoChem ◽  
2017 ◽  
Vol 1 (6) ◽  
pp. 273-280 ◽  
Author(s):  
Samantha Hilliard ◽  
Dennis Friedrich ◽  
Stéphane Kressman ◽  
Henri Strub ◽  
Vincent Artero ◽  
...  

Author(s):  
Danial Ahmad; M. Amer Khan ◽  
Arslan Mehmood; Amjad Sohail; S. S. Ali Gillani

Due to excellent structural and optical properties of molybdenum oxide (MoO, MoO2 and MoO3) were preferred in multiple applications such as gas sensing solar cell, optoelectronics devices and medical physics. The present study was related to synthesis of molybdenum oxide thin film via dip coating technique and the film was characterised by using various characterisation techniques such as XRD, SEM and UV-visible spectroscopy. The monoclinic crystal structure and the crystallite size (29.16~52.77) was investigated by XRD analysis. Moreover, SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibit the maximum absorption in ultra-violet region and band gap decrease (3.05 to 2.55 eV) with increased the oxide radical in molybdenum thin film. The present results suggest that the series of molybdenum oxide (MoO, MoO2 and MoO3) improved the structural and optical properties which make it a good candidate for photocatalytic activity.


2013 ◽  
Vol 334-335 ◽  
pp. 349-352
Author(s):  
N. Baydogan ◽  
Y. Gokce ◽  
Murat Baydogan ◽  
Huseyin Cimenoglu

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.


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