scholarly journals Interaction of impurity atoms of light elements with self-interstitials in fcc metals

2019 ◽  
Vol 9 (2) ◽  
pp. 207-211 ◽  
Author(s):  
Irina Zorya ◽  
Gennady Poletaev ◽  
Roman Rakitin ◽  
Marina Ilyina ◽  
Mikhail Starostenkov
Author(s):  
Г.М. Полетаев ◽  
И.В. Зоря

The effect of impurities of light elements C, N, O on the velocity of motion of the crystallization front in fcc metals Ni and Ag was studied by the method of molecular dynamics. The dependences of the crystallization rate on the concentration of impurities are obtained. It is shown that the presence of impurities leads to a significant slowdown in the velocity of motion of the crystallization front in metals. Braking of the crystallization front by the impurity atoms is associated with the local deformation of the crystal lattice that they cause, and, as a rule, the greater this deformation, the stronger the impurity atoms inhibit the crystallization front.


2009 ◽  
Vol 2009 ◽  
pp. 1-3 ◽  
Author(s):  
Koji Sueoka ◽  
Ken Kamimura ◽  
Seiji Shiba

The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B), n-type dopants (P, As, Sb), or light elements (C, O). It was found that (1) the diffusion barrier of impurity atoms decreases with an increase in their atomic number up to Ni, (2) B atom becomes an efficient gettering center for metals except for Ni, (3) most of the metals except for Fe and Co cannot be gettered by n-type dopants, and (4) C and O atoms alone do not become efficient gettering centers for the metals used in actual LSI processes. The vacancy and n-type dopant complexes (P, As, Sb) can be efficient gettering centers for Cu in n/n+ epitaxial wafers.


2020 ◽  
Vol 62 (12) ◽  
pp. 930-935
Author(s):  
G. M. Poletaev ◽  
I. V. Zorya ◽  
R. Yu. Rakitin ◽  
M. D. Starostenkov

Effect of carbon and oxygen impurity atoms on diffusion along the tilt grain boundaries with <100> and <111> misorientation axis in metals with FCC lattice was studied by mean of molecular dynamics method. Ni, Ag, and Al were considered as metals. Interactions of metal atoms with each other were described by many-particle Clery-Rosato potentials constructed within the framework of tight binding model. To describe interactions of atoms of light elements impurities with metal atoms and atoms of impurities with each other, Morse pair potentials were used. According to obtained results, impurities in most cases lead to an increase in self-diffusion coefficient along the grain boundaries, which is caused by deformation of crystal lattice near the impurity atoms. Therefore, additional distortions and free volume are formed along the boundaries. It is more expressed for carbon impurities. Moreover, with an increase in concentration of carbon in the metal, an increase in coefficient of grain-boundary self-diffusion was observed first, and then a decrease followed. This behavior is explained by formation of aggregates of carbon atoms at grain boundary, which leads to partial blocking of the boundary. Oxygen atoms had smaller effect on diffusion along the grain boundaries, which is apparently explained by absence of a tendency to form aggregates and lesser deformation of crystal lattice around impurity. The greatest effect of impurities on self-diffusion along the grain boundaries among the examined metals was observed for nickel. Nickel has the smallest lattice parameter, impurity atoms deform its lattice around itself more than aluminum and silver, and therefore they create relatively more lattice distortions in it and additional free volume along the grain boundaries, which lead to an increase in diffusion permeability. Diffusion coefficients along the high-angle boundaries with misorientation angle of 30° turned out to be approximately two times higher than along low-angle boundaries with a misorientation angle of 7°. Diffusion along the <100> grain boundaries flowed more intensively than along the <111> boundaries.


1983 ◽  
Vol 13 (10) ◽  
pp. 2077-2088 ◽  
Author(s):  
H Andreasen ◽  
S Damgaard ◽  
J W Petersen ◽  
G Weyer

2020 ◽  
Vol 63 (5) ◽  
pp. 357-363
Author(s):  
I. V. Zorya ◽  
G. M. Poletaev ◽  
M. D. Starostenkov ◽  
R. Yu. Rakitin ◽  
D. V. Kokhanenko

Molecular dynamics method was used to study the effect of impurities of light elements of carbon, nitrogen and oxygen on crystallization process near the triple interface of grain boundaries in nickel. Tilt boundaries with misorientation axis <111> were considered as the grain boundaries. Interactions of nickel atoms with each other were described by many-particle Clery-Rosato potential constructed within the framework of the tight binding model. To describe interactions of atoms of light elements impurities with nickel atoms and atoms of impurities with each other, Morse pair potentials were used. Calculation cell had a shape of cylinder, axis of which coincided with the line of triple interface and the axis of grain misorientation. Periodic boundary conditions were imposed along the cylinder axis, and the atoms on side surface of cylinder were motionless. To simulate crystallization, calculation cell was melted by heating to a temperature well above the melting temperature of nickel. After the simulated polycrystal become liquid, the thermostat was turned on and held at a constant temperature below the melting temperature. Rigid boundary conditions on the lateral surface of cylindrical calculation cell in this case simulated crystallization fronts from three crystallization centers. The area near the triple interface had crystallized the last. In this area, defects and free volume were concentrated. Presence of impurities led to a significant slowdown in the rate of crystallization. With introduction of 10 % of impurity atoms, the rate of motion of crystallization front decreased several times. The effect of impurities on crystallization rate was enhanced in C – N – O direction, which is due to difference in crystal lattice deformation caused by impurity atoms. The greater this deformation was, the stronger was impurity atoms inhibit crystallization front. Formation of aggregates at fairly high concentrations was typical for impurity carbon atoms. Crystallization front had impeded on these aggregates. The oxygen and nitrogen atoms did not form aggregates. However, due to distortions of crystal lattice caused by them, they also strongly slowed down the crystallization front.


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