scholarly journals Investigation of Hg 1-X Cdx te epitaxial vapor phase growth under isothermal conditions

1999 ◽  
Vol 64 (7-8) ◽  
pp. 463-470 ◽  
Author(s):  
Vesna Jovic ◽  
Zoran Djinovic
Keyword(s):  
Activation Energy ◽  
Vapor Phase ◽  
Type Equation ◽  
Solid State Diffusion ◽  
Phase Growth ◽  
Experimental Conditions ◽  
Isothermal Conditions ◽  
State Diffusion ◽  
Isothermal Growth ◽  
The Given

The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region from 420?C to 550?C with different source to substrate spacings, varying from 1 to 11 mm. It was found that the dependence of the growth rate on temperature could be well described by an Arrhenius type equation with an activation energy of 80 kJ/mol in the investigated temperature interval. The activation energies for the crystallization were the same for all the investigated source to substrate spacing.This activation energy value points to the importance of a solid-state diffusion process in the Hg 1-x Cdx Te/CdTe epitaxial couple obtained by isothermal growth under the given experimental conditions.

Experimental Observation of Silver and Gold Penetration into Dental Ceramic by Means of a Radiotracer Technique

1987 ◽  
Vol 66 (12) ◽  
pp. 1717-1720 ◽  
Author(s):  
F. Moya ◽  
J. Payan ◽  
J. Bernardini ◽  
E.G. Moya
Keyword(s):  
Solid State ◽  
Penetration Depth ◽  
Diffusion Rate ◽  
Diffusion Mechanism ◽  
Solid State Diffusion ◽  
Ceramic Surface ◽  
Experimental Conditions ◽  
Radiotracer Technique ◽  
State Diffusion ◽  
Gold Diffusion

A radiotracer technique was used to study silver and gold diffusion into dental porcelain under experimental conditions close to the real conditions in prosthetic laboratories for porcelain bakes. It was clearly shown that these non-oxidizable elements were able to diffuse into the ceramic as well as oxidizable ones. The penetration depth varied widely according to the element. The ratio DAg/DA u was about 103 around 850°C. In contrast to gold, the silver diffusion rate was high enough to allow silver, from the metallic alloy, to be present at the external ceramic surface after diffusion into the ceramic. Hence, the greening of dental porcelains baked on silver-rich alloys could be explained mainly by a solid-state diffusion mechanism.

The Effect of Doping of Lead with Lithium and Zinc with Strontium on the Kinetics and Phase Formation in a Number of Low-Melting Eutectic Systens User in Electronics and Heat-Transfer Agents

2020 ◽  
Vol 28 ◽  
pp. 26-30
Author(s):  
Artur Mishevich Bagov ◽  
Anatoliy Amishevich Akhkubekov ◽  
Svetlana Nanievna Akhkubekova ◽  
Tanziliya Zhagafarovna Kumukova
Keyword(s):  
Heat Transfer ◽  
Structure Formation ◽  
Impurity Content ◽  
Chemical Compounds ◽  
Junction Zone ◽  
Phase Growth ◽  
Experimental Conditions ◽  
State Diagrams ◽  
The Given ◽  
Kinetics Of

The effect of Li and Sr impurities on the kinetics and structure formation of alloys in the Sn - Pb, In - Zn, Sn - Zn systems used in the soldering of instrument nodes in electronics has been investigated. The XPS method showed that under the given experimental conditions and the indicated concentrations of lithium impurities in lead and strontium in zinc, there are no prerequisites for the formation of chemical compounds, which is explained by an insignificant impurity content, although a significant amount of chemical compounds is formed according to state diagrams. It was also established that impurities affect the kinetics of phase growth in the junction zone.

Tailored Vapor-Phase Growth of CuxO–TiO2(x= 1, 2) Nanomaterials Decorated with Au Particles

Langmuir ◽  
2011 ◽  
Vol 27 (10) ◽  
pp. 6409-6417 ◽  
Author(s):  
Davide Barreca ◽  
Giorgio Carraro ◽  
Alberto Gasparotto ◽  
Chiara Maccato ◽  
Oleg I. Lebedev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Phase Growth ◽  
Vapor Phase Growth

Vapor phase growth of nanostructured yttrium oxysulfide films

2008 ◽  
Vol 44 (1) ◽  
pp. 67-69 ◽  
Author(s):  
V. V. Bakovets ◽  
T. M. Levashova ◽  
I. Yu. Filatova ◽  
E. A. Maksimovskii ◽  
A. E. Kupcha
Keyword(s):  
Vapor Phase ◽  
Phase Growth ◽  
Vapor Phase Growth

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Investigation of the diffusion behavior in Sn-xAg-yCu/Cu solid state diffusion couples

2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans
Keyword(s):  
Solid State ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
Diffusion Behavior ◽  
State Diffusion
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