Metal-Insulator Transitions in Disordered Systems

2020 ◽  
pp. 33-46
Author(s):  
Myriam P. Sarachik
Keyword(s):  
Disordered Systems ◽  
Metal Insulator

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

PERCOLATION AND TUNNELING IN COMPOSITE MATERIALS

2004 ◽  
Vol 18 (15) ◽  
pp. 2091-2121 ◽  
Author(s):  
I. BALBERG ◽  
D. AZULAY ◽  
D. TOKER ◽  
O. MILLO
Keyword(s):  
Electrical Transport ◽  
Disordered Systems ◽  
Microcrystalline Silicon ◽  
Physical Processes ◽  
Electrical Transport Properties ◽  
Metal Insulator ◽  
The Past ◽  
Bona Fide ◽  
The Difference ◽  
Theoretical Developments

Classical percolation theory is concerned with the onset of geometrical connectivity and the accompanied onset of electrical connectivity in disordered systems. It was found, however, that in many systems, such as various composites, the geometrical and electrical onsets of the connectivity are not simultaneous and the correlation between them depends on physical processes such as tunneling. The difference between the above two types of systems and the consequences for the electrical transport properties of the latter composites have been largely ignored in the past. The application of scanning local probe microscopies and some recent theoretical developments have enabled a better understanding of the latter systems and their sometimes "strange" behavior as bona fide percolation systems. In this review we consider the above issues and their manifestation in three types of systems: Carbon Black–Polymer composites, metal–insulator cermets and hydrogenated microcrystalline silicon.

Review lecture: Metal–insulator transitions

1982 ◽  
Vol 382 (1782) ◽  
pp. 1-24 ◽  
Keyword(s):  
Magnetic Field ◽  
Gate Voltage ◽  
Disordered Systems ◽  
Mixed Valence ◽  
Impurity Band ◽  
Donor Concentration ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
First Order ◽  
Or Gate

A survey is given of a variety of solids that show a metal–insulator transition. In crystals most transitions are expected to be of first order as the composition or temperature is changed; in disordered systems this is not necessarily the case. The transition in an impurity band with change of donor concentration is described, and also with change of stress, magnetic field or gate voltage. The concept of a minimum metallic conductivity is discussed, with special reference to materials of mixed valence.

The Metal-Insulator Transition in Correlated Disordered Systems

Science ◽  
1996 ◽  
Vol 274 (5294) ◽  
pp. 1853-1854 ◽  
Author(s):  
E. Abrahams ◽  
G. Kotliar
Keyword(s):  
Disordered Systems ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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