A Silicon BJT Active ESD Clamp Design in a Silicon Germanium HBT BiCMOS Technology

We present design considerations for high speed high swing differential modulator drivers in SiGe BiCMOS technology. Trade-offs between lumped and distributed designs, and linear and limiting amplifiers are examined. The design of a 6 V output modulator driver is discussed in detail. The driver features a unique bias generation and distribution circuit that enables low power-supply operation. Simulation results and measurements are given.

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Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1996.554635 ◽

2002 ◽

Cited By ~ 14

Author(s):

R. Groves ◽

K. Stein ◽

D. Harame ◽

D. Jadus

Keyword(s):

Temperature Dependence ◽

Silicon Germanium ◽

Bicmos Technology ◽

Spiral Inductors

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50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2–50+ GHz Very Large-Scale Integration Mixed-Signal ICs

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1111 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1111-1123 ◽

Cited By ~ 1

Author(s):

Seshadri Subbanna ◽

Gregory Freeman ◽

Jae-Sung Rieh ◽

David Ahlgren ◽

Kenneth Stein ◽

...

Keyword(s):

Silicon Germanium ◽

Computer Aided Design ◽

Large Scale ◽

Heterojunction Bipolar Transistor ◽

Design Environment ◽

Bicmos Technology ◽

Computer Aided ◽

Large Scale Integration ◽

Scale Integration ◽

Aided Design

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HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156403001582 ◽

2003 ◽

Vol 13 (01) ◽

pp. 221-237

Author(s):

KARL E. FRITZ ◽

BARBARA A. RANDALL ◽

GREGG J. FOKKEN ◽

MICHAEL J. DEGERSTROM ◽

MICHAEL J. LORSUNG ◽

...

Keyword(s):

Low Power ◽

Analog Circuits ◽

Integrated Circuit ◽

Silicon Germanium ◽

High Speed ◽

Digital Signal ◽

Electronic Warfare ◽

Bicmos Technology ◽

Sige Bicmos ◽

Military Systems

Under the auspices of Defense Advanced Research Project Agency's Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, the Mayo Foundation Special Purpose Processor Development Group is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being studied include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology, simulations and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS 5HP (50 GHz fT HBTs with 0.5 μm CMOS) and 7HP (120 GHz fT HBTs with 0.18 μm CMOS) technologies will be presented.

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